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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4258-4260 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied microwave surface resistance Rs and residual resistance Rres in undoped and Ag-doped laser ablated thin-film YBa2Cu3O7−δ microstrip resonators on LaAlO3 substrates. While the undoped films showed a frequency dependence Rs∝fp, where p=1.9±1, Ag-doped films showed p=1.6±1 and 1.4±1 for 5 and 10 wt % Ag doping, respectively. Lower p values and higher Rres observed in Ag-doped films indicate a metallic contribution. However, the advantage of Ag-doped films has been shown to be at 77 K at which they not only have a lower Rs but also a low dRs/dT, thus making them superior to undoped films for microwave devices operating at 77 K.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2166-2168 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting LuBa2Cu3O7−δ thin films have been grown in situ on 〈100〉 LaAlO3 by pulsed laser deposition and their effective surface resistance, Reff, has been measured at 10 GHz at various temperatures and for various thicknesses using microstrip resonator technique. The results show that the films are highly c-axis oriented with a high critical current density, Jc, in the range 4–5×106 A cm−2 at 77 K and a low value of intrinsic surface resistance Rs, of 320 μΩ for 10 GHz at 77 K. Thicker films ((approximately-greater-than)3000 A(ring)) however, have shown degraded values presumably due to the strain caused by the small ionic radius of lutetium which, as shown by Somasundaram et al. [Mater. Res. Bull. 25, 331 (1990)], makes LuBa2Cu3O7−δ unstable in bulk.
    Type of Medium: Electronic Resource
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