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  • 1
    Electronic Resource
    Electronic Resource
    Photoelectron study of the valence levels of CF4 and SiF4 from 20 to 100 eV (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 4906-4916 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation, the gas phase photoelectron spectra of the five valence orbitals of CF4 and SiF4 have been obtained from 21 to 100 eV photon energies. Branching ratios (BR) for both molecules, and partial cross sections (σ) for CF4, have been obtained from these spectra. The agreement between our σ values for CF4 and previous results is excellent. Theoretical branching ratios, partial cross sections, and β values have been obtained from MS Xα calculations, and compared with experiment. The generally good agreement between experiment and theory for SiF4 confirms the orbital assignment: 1t1〈5t2〈1e〈4t2〈5a1, in order of increasing binding energy. In contrast to the CF4 results which show little structure, five shape resonances are predicted for SiF4, at 3, 7, 13, 23, and 35 eV kinetic energies. The predicted resonance positions and intensities are in good agreement with experiment (e.g., for the 23 and 35 eV resonances), but the low energy resonance positions and intensities are usually not well reproduced experimentally. The radically different resonance features in CF4 and SiF4 are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449749
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  • 2
    Electronic Resource
    Electronic Resource
    Shape resonances above the Si 2p threshold in SiF4 (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 5-9 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation and angle integrated photoelectron spectroscopy, the Si 2p, Si LVV Auger, and F 2s cross sections have been obtained for SiF4 molecules in the gas phase between 116 and 150 eV photon energies. These cross sections and the Si 2p β value have also been calculated using the MS-Xα method. There is qualitative agreement between theory and experiment. Together with recent experimental and theoretical Si 2p cross sections from SiCl4 and valence band cross sections on SiF4, the two major resonances at 5 and 22 eV kinetic energies are assigned as t2 resonances. The valence band branching ratios are not affected by interchannel coupling above the Si 2p threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450131
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  • 3
    Electronic Resource
    Electronic Resource
    New doser for chemical vapor deposition of low vapor-pressure solid precursors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3672-3674 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we describe a new ultrahigh vacuum compatible device to maximize the volatilization of low vapor-pressure precursors used in chemical vapor deposition processes while minimizing their dissociation. A differentially pumped system that places the precursor close to the target substrate was adopted to achieve this configuration; it also allows loading and unloading of the precursor reservoir without breaking vacuum. The device permits the volatilization of low vapor-pressure solid precursors by passing a preheated carrier gas through the precursor which is placed between two fritted disks. This device was also used without a carrier gas and proved its efficiency. The complexes (1,1,1,5,5,5-hexafluoropentanedionato)(1,5-cyclooctadiene) copper (I), [(hfac)Cu(COD)], and (1,1,1,2,2,3,3-heptafluoro-7, 7-dimethyl-4, 6-octanedionato) (trimethylphosphine) silver (I), [(fod)AgPMe3], proved the efficacy of this doser in delivering intact precursors to the substrate using reflection-absorption infrared spectroscopy and mass spectrometry techniques during the adsorption of these precursors on polished Al disks and on polyurethane thin films spun cast onto similar polished Al disks. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147133
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  • 4
    Electronic Resource
    Electronic Resource
    Photoelectron study of the valence level cross sections of XeF2 from 21 to 50 eV photon energy (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 3603-3609 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation, the gas phase photoelectron spectra of the first five valence orbitals of XeF2 have been obtained from 21–50 eV photon energy. From these spectra, the branching ratios and partial cross sections have been calculated. Theoretical branching ratios and partial cross sections have been obtained from MS-Xα calculations and compared with experiment. The generally good agreement between experiment and theory confirms the DV-Xα and MS-Xα orbital assignments: 5πu 〈10σg 〈3πg 〈4πu 〈6σu, in order of increasing binding energy. Somewhat surprisingly because of the lack of antibonding virtual orbitals above threshold and the long Xe–F bond length (2.00 A(ring)), a number of strong resonances are predicted and observed. For example, resonances are predicted at 4.8 (πg channel), 11.6 (πu, δu channels), and 14.3 eV (σu channel) kinetic energies. The observed resonance positions are usually in reasonable agreement with these. The nature of these resonances are discussed, and compared to similar features in O2, F2, and CO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.450196
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopic studies of thin film oxides of cobalt and molybdenum (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 265-272 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Surface oxidation reactions of cobalt, molybdenum and mixed cobalt-molybdenum metals have been investigated using x-ray photoelectron spectroscopy (XPS). The oxide stoichiometries have been determined from XPS intensity measurements. Such quantification has been important in identifying oxide compositions with characteristic XPS spectra. A number of discrete binary molybdenum oxides have been characterized after reactions at 200°C and pressures ranging from 1 atm to 10-6 Pa. At the lowest pressure, the Mo 3d spectra and O/Mo ratios suggest the formation of a molybdenum-oxygen structure with a stoichiometry near unity. By contrast, at higher pressures, oxides that are predominantly MoO2 and MoO3 appear, but other intermediate oxide structures are also identified. Well-defined binary oxides of cobalt can be prepared from cobalt metal after heating in oxygen at different pressures. New binary oxides of cobalt and molybdenum have been generated by the reaction on MoO3 or Co3O4 substrates. Oxidation of a thin film of molybdenum on a Co3O4 substrate has been shown to produce a nearly stoichiometric surface layer of CoMoO4. The procedure could be useful for the production of other ternary oxides of possible interest for use as XPS reference materials.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740150406
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  • 6
    Electronic Resource
    Electronic Resource
    Reactions on thin films of cobalt-molybdenum oxides: I. characterization of molybdenum and cobalt oxide species by high resolution XPS (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 253-254 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090415
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  • 7
    Electronic Resource
    Electronic Resource
    Reactions on thin films of cobalt-molybdenum oxides: II. Reduction, sulphidation and hydrodesulphurization (HDS) activities (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 255-257 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090416
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    Paper (German National Licenses)
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