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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 51 (1979), S. 2350-2354 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2321-2325 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of porous Si were prepared from p-type, 10 Ω cm Si under 10 mA cm−2 anodization in aqueous HF (mostly 50%) for 5 min. These showed photoluminescence peaking at 835 nm at 10 K, with full width half maximum of 78 nm, the data showing little change up to 150 K. High-resolution scanning electron microscopy showed column widths of 2–6 nm in the 2-μm-thick films. Hydrogen content was measured by the method of elastic recoil detection, and carbon and oxygen by nuclear reaction analysis. The fluorine content was measured by particle-induced gamma emission as 0.03 at. %. The Si, O, C, and H contents were confirmed by Rutherford backscattering analysis, as approximately Si2.5O1.2C1.3H1.2. The data, particularly the low Si content, are not inconsistent with the presence of complex chemical compounds in the films, although any role they play is not established.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5687-5694 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition, distribution, and chemical bonding of tungsten-implanted glassy carbon have been studied for ion doses between 3.5×1014 and 1.5×1017 ions/cm2. The implantations were performed using a metal-vapor vacuum arc ion source which for an extraction potential of 20 kV yields a mean implant energy of 60 keV. The implanted layer was examined by Rutherford backscattering spectrometry and Auger profiling spectroscopy. In addition, volume effects were assessed by measuring the step height between implanted and unimplanted regions. It has been established that the implanted tungsten is bonded in a carbidic configuration. This is in agreement with thermodynamic data which favors carbide formation rather than separate phases of metallic tungsten and graphitic carbon. For the highest dose studied, 1.5×1017 ions/cm2, the tungsten distribution was found to be nearly constant near the surface followed by a decrease at larger depths. For ion doses up to 3.6×1016 ions/cm2, the maximum tungsten distribution was found to occur at a depth 300±100 A(ring) and the implanted and retained doses were found to be equal. For tungsten ion doses between 7.35×1014 and 1×1016 ions/cm2, the implanted region was found to be compacted by 300±100 A(ring). The latter is attributed to an irradiation-induced densification of glassy carbon from 1.5 to 2.1 g/cm3. This compaction effect is also found to occur upon C+ (30 keV) implantation for ion doses between 3×1016 and 1.3×1017 ions/cm2. In this case the implanted layer was compacted by 400±100 A(ring). For higher tungsten doses, a steep increase in compaction of the tungsten implanted layer was observed. This is attributed to chemical and sputtering effects.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3100-3104 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AuGe-Ni is widely used for the fabrication of ohmic contacts to n-GaAs. The alloying behavior of evaporated AuGe-Ni alloyed by furnace and scanning electron beam (SEB) is characterized by Rutherford backscattering with 2-MeV 4He+ ions. The redistribution and diffusion of constitutents involved in the ohmic contact formation is studied by comparing the experimental spectrum with theoretically computed spectra. The studies show that SEB-alloyed contacts undergo less redistribution of contact constituents compared with furnace-alloyed contacts. It is established that the penetration depth of Au for furnace-alloyed contacts increases with metallization thickness, whereas for SEB-alloyed contacts the penetration depth is independent of metallization thickness.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2077-2079 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hydrogen plasma erosion and abrasive wear resistance of glassy carbon implanted with tungsten has been studied as a function of ion dose. It was found that the onset of hydrogen plasma erosion inhibition occurred at a dose of ∼6.5×1015 ion/cm2. In addition, the tungsten implanted material exhibits an increase in wear resistance similar in magnitude to that obtained with nitrogen and other nonmetallic ions. Carbon ion implantation does not significantly inhibit erosion in a hydrogen plasma. Hence, the resistance to such erosion observed with tungsten implanted glassy carbon is believed to be due to a chemical effect specific to certain metallic ions. In contrast, increased wear resistance is a defect driven effect not specific to the ion used.
    Type of Medium: Electronic Resource
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