ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The characteristic of trap assisted conduction and interface states for a Pd/TiO2/SiO2/SiCstructure has been investigated at temperatures up to 500 °C. Thermally oxidized Ti/SiO2 gatecapacitors fabricated by dry oxidation in O2 were studied. The electrical measurements show thecurrent conduction through this capacitor structure is controlled by a trap assisted conductionmechanism at low bias and the barrier height (φA) between the metal and the TiO2 was extracted.The current density in the dielectric stacks is also shown to be strongly temperature dependent. Theresults demonstrate that the formation of a charge dipole under the Pd contact is responsible forbarrier height and not any changes in the behaviour of the TiO2 film itself, such as a change inconcentration of trapping centres. The reported results indicate electron trapping property across theSiO2 layer is consistent with fitting experimental results to the trap assisted conduction model
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.679.pdf
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