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Effects of annealing on infrared and thermal-effusion spectra of sputtered a-Si:H alloys (1992)

Talukder, G. ; Cornish, J. C. L. ; Jennings, P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 403-409

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Infrared spectroscopy and thermal effusion have been used to study the nature of the silicon-hydrogen bond in sputtered a-Si:H alloys. The samples were prepared by reactive sputtering under different deposition conditions to produce varying hydrogen contents. The Fourier transform infrared spectra have been analyzed using the simplex algorithm to deconvolute the component peaks. This technique has been applied separately to both the stretching- and bending-mode regions of the infrared absorption spectra. Studies have been made of the effects of annealing on both the infrared and the thermal evolution spectra of hydrogen. The results indicate a redistribution and transformation of different bonding configurations due to annealing. A comparative study is presented of the thermal-effusion spectra for partial and total degassing with the infrared spectra taken before and after each phase of degassing.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350723

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Effect of charge on bond strength in hydrogenated amorphous silicon (1994)

Clare, B. W. ; Talukder, G. ; Jennings, P. J. ; [et al.]

New York, NY [u.a.] : Wiley-Blackwell

Journal of Computational Chemistry 15 (1994), S. 644-652

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ISSN: 0192-8651

Keywords: Computational Chemistry and Molecular Modeling ; Biochemistry

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology , Computer Science

Notes: We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate that both positive and negative charges reduce the strength of Si—H and Si—Si bonds considerably, to the point where they may be broken easily by visible or even infrared light. © 1994 by John Wiley & Sons, Inc.

Additional Material: 1 Ill.