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  • 1
    Electronic Resource
    Electronic Resource
    Acute gastric volvulus secondary to a Morgagni hernia (2000)
    Springer
    Pediatric surgery international 16 (2000), S. 107-108 
    Details
    ISSN: 1437-9813
    Keywords: Key words Gastric volvulus ; Morgagni hernia
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Gastric volvulus (GV) is a rare surgical emergency in infancy and childhood. The first case of a child with an acute GV secondary to a Morgagni hernia (MH) is reported. The authors briefly discuss the etiology, clinical features, and management of acute GV and review the scattered reports of strangulated MHs in children.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003830050031
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  • 2
    Electronic Resource
    Electronic Resource
    Unpinned GaAs Schottky barriers with an epitaxial silicon layer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2173-2184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results of Al/n- and Al/p-type GaAs Schottky barrier structures grown in situ by molecular-beam epitaxy with thin Si epitaxial interfacial layers. The barrier heights are measured by the I-V, thermal activation, C-V, and photoresponse methods. Barrier heights in the range of 0.3〈φbN〈1.04 eV for n-type GaAs and 0.28 〈 φbP〈1.01 eV for p-type GaAs were obtained for Si layer thicknesses between 6 and 100 A(ring). Annealing studies conducted on the samples indicate that the structures are thermally stable to temperatures up to 450 °C. These results imply that the GaAs surface Fermi level at the Si/GaAs interface is unpinned from its customary near-midgap value. A model which involves the energy-band discontinuities ΔEC and ΔEV between GaAs and Si, the thickness, and the doping of the Si layer is suggested to account for the different barrier-height values obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349456
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetostrictive influence on the bistability of amorphous wires (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1164-1168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of tension and external field on the magnetization process in amorphous positive magnetostrictive Fe-Si-B wires. The radial stress created during the in-rotating water quenching technique of producing these wires causes a radial anisotropy. Using a simple phenomenological model which assumes a continuous distribution for the values of these radial stresses, we fit the observed values of the remanence as a function of the applied longitudinal stress and obtain information about the stress distribution. We also explain in a consistent manner the dependence of the magnetization process on the applied longitudinal stress. On doing so, a value of the saturation magnetostriction constant λs=28×10−6 is obtained for a Fe77.5Si7.5B15 amorphous wire. In the stress dependence of the nucleation field for the Barkhausen jump we observe a minimum. A quantitative explanation for this minimum is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346712
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  • 4
    Electronic Resource
    Electronic Resource
    Ultrafast relaxation of hot minority carriers in p-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2122-2124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of hot minority carriers in p-GaAs is calculated for doping concentrations in the range of 1.5×1017 cm−3 to 1.5×1018 cm−3. It is shown that the electron-hole interaction increases the rate of dissipation of the excess energy of the minority carriers in the early stages of the process. However, this channel for energy dissipation becomes weaker as the cooling of the minority carriers proceeds, an effect more noticeable in the case of high doping levels. When the electron-hole interaction is disregarded, the dissipation rate is always smaller for low doping concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355325
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  • 5
    Electronic Resource
    Electronic Resource
    Tunneling measurements of the energy gap in Tl- and Bi-based oxide superconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5026-5028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the behavior found in tunneling measurements obtained by us on two high-Tc superconductors—a ceramic sample of Tl2Ca2Ba2Cu3O10+δ and a Bi4Ca3Sr3Cu4O16+δ single crystal—using a scanning tunneling microscope. We compare some of the experimental curves with simple model calculations, assuming different tunnel-barrier shapes (i.e., different barrier heights, degree of asymmetry, thickness, etc.), and also different quasiparticle density-of-states profiles and tunnel-junction configurations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344712
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  • 6
    Electronic Resource
    Electronic Resource
    Affine collineations in space-time (1988)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 2465-2472 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The existence of affine collineations in space-time is discussed and the types of space-time admitting proper affine collineations is displayed. The close connection between such space-times and their holonomy structure and local decomposability is established. Affine collineations with fixed points are also considered as is the problem of extending local affine collineations to the whole of space-time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528083
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  • 7
    Electronic Resource
    Electronic Resource
    Curvature collineations in general relativity. I (1991)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 2848-2853 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Although curvature collineations (curvature preserving transformations) have been studied within the context of general relativity for 20 years, there has been little attempt to study them systematically and there does not appear to have been a detailed mathematical investigation of their properties. This is the first of two papers that are intended as a contribution to this deficiency. This paper presents a discussion of the more general mathematical aspects of curvature collineations and suggests a program for studying them. The implementation of this program and the analysis of specific examples will be carried out in the second paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.529075
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  • 8
    Electronic Resource
    Electronic Resource
    Curvature collineations in general relativity. II (1991)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 2854-2862 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: This paper is the second of a set of two papers on curvature collineations in general relativity. The first paper presented the mathematical basis of curvature collineations and a possible approach to their study. This paper continues from the first one by investigating in detail many of the cases where curvature collineations can occur in space-time. It is based on a classification of the curvature tensor which is discussed in the first paper and reviewed briefly here. This, together with the geometrical approach favored in this paper, leads to a rather general discussion of the problem which, it is hoped, does not obscure those physical aspects of the situation that are important in Einstein's theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.529076
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  • 9
    Electronic Resource
    Electronic Resource
    Giant magnetoresistive sensors for rotational speed control (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5459-5461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates spin valve (sv) sensor applications as rotational speed control devices, in a Wheatstone bridge configuration. The sensor architecture uses two active self-biased sv elements (dimensions 400×6 μm2) in a CoZrNb flux guide. The other two spin valves are inactivated for external fields inferior to 150 Oe. Inactivation is achieved by increasing the ferromagnetic coupling of the inactive spin valves above 200 Oe, by roughening the surface of the underlying oxide layer (12 Å average roughness). When excited by a magnetized wheel with 60 N-S poles rotating at 360 rpm, the sensor yields a 400 mV pp square wave output with rise/fall times corresponding to an angular resolution of 0.17°. Amplitude is independent of speed (0–3000 rpm), and of sensor to wheel separation (0.5≤d(mm)≤2.0). Bridge output decreases 26% when temperature is increased to 150 °C. Bridge offset of 350 mV is caused by the resistance differences between the active and inactive sv elements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369975
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  • 10
    Electronic Resource
    Electronic Resource
    In situ fast ellipsometric analysis of repetitive surface phenomena (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3135-3139 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an ellipsometric technique and ellipsometric analysis of repetitive phenomena, based on the experimental arrangement of conventional phase modulated ellipsometers (PME) conceived to study fast surface phenomena in repetitive processes such as periodic and triggered experiments. Phase modulated ellipsometry is a highly sensitive surface characterization technique that is widely used in the real-time study of several processes such as thin film deposition and etching. However, fast transient phenomena cannot be analyzed with this technique because precision requirements limit the data acquisition rate to about 25 Hz. The presented new ellipsometric method allows the study of fast transient phenomena in repetitive processes with a time resolution that is mainly limited by the data acquisition system. As an example, we apply this new method to the study of surface changes during plasma enhanced chemical vapor deposition of amorphous silicon in a modulated radio frequency discharge of SiH4. This study has revealed the evolution of the optical parameters of the film on the millisecond scale during the plasma on and off periods. The presented ellipsometric method extends the capabilities of PME arrangements and permits the analysis of fast surface phenomena that conventional PME cannot achieve. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148257
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