Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Application of the laser flash diffusivity method to thin high thermal conductivity materials (1998)
    Springer
    Microsystem technologies 5 (1998), S. 18-21 
    Details
    ISSN: 1432-1858
    Keywords: Key words Laser flash diffusivity ; thermal diffusivity ; heat management layers ; pulsed photothermal radiometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract The evolution of semiconductor devices and the dramatic increases in the power dissipation per unit volume of ever smaller microelectronic devices means electronic packaging technologies must evolve to manage the dissipation of heat. One of the major issues is the development of new packaging materials optimised for heat management. Future packaging will incorporate layers with thermal diffusivities exceeding that of copper in thin, sub-millimetre foils. Metrology techniques are needed to measure the thermal diffusivity of these thin, thermally fast materials. As some new materials are developed only in the form of thin substrates the laser flash technique is limited in its application to these materials. This paper addresses the application of a nanosecond pulsed laser flash instrument to the measurement of thermal diffusivity of thin high thermal conductivity materials and the errors associated with the measurement. An experimental comparison is made with a laser flash instrument where the laser pulse is of higher energy but millisecond pulse duration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050135
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Correlation between the elastic and structural properties of thin-film tungsten silicide layers from surface acoustic wave analysis (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1591-1593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin, silicon-rich tungsten silicide layers, deposited using the co-sputtering technique and annealed within the temperature range 750–950 °C, were investigated using the acoustic material signature technique, transmission electron microscopy, and the Rutherford backscattering technique. The effective elastic constants were determined from the dispersion curves calculated using a Tiersten model [J. Appl. Phys. 40, 2 (1969)] and fitted to the experimental dispersion data. It is shown that for the annealing temperatures used the elastic properties of thin silicide films are correlated with the annealing temperature-dependent content of the excess silicon present within the grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98564
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Observation of wavelength-dependent generation efficiency of laser-induced ultrasonic surface acoustic waves on ceramic materials (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3767-3769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, the efficiency of laser generation of surface acoustic waves (SAWs) in ceramic materials is reported to be wavelength dependent. A pulsed Nd:YAG laser operating at wavelengths of 1064 or 532 nm was used to generate SAWs on ceramic (silicon nitride and silicon carbide) and metal substrates. It was observed that 1064 nm radiation is more efficient than 532 nm radiation for SAW generation on ceramics, whereas the opposite is the case for metals. While the wavelength dependence of SAW generation efficiency in metals is due to stronger optical absorption at the shorter wavelength, the dependence for the ceramics is attributed to a longer absorption length at the longer wavelength. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120500
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Acoustic shear wave imaging using an annular lens (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 318-320 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annular lenses for acoustic shear wave imaging are investigated in this letter. Both theoretical analysis of the distribution of the focused acoustic field in Al2O3 and experimental results show that the longitudinal wave field in a solid will be seriously suppressed by a small absorbing disk at the center of the lens which does not significantly effect the shear wave field in the material. Internal material images are also presented showing that an annular lens is very suitable for obtaining a high quality shear wave image.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108945
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Characterization of dry etch-induced damage in semiconductor materials using a noncontact photothermal radiometric probe (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects induced in n-type silicon (Si) and gallium arsenide (GaAs) substrates by argon ion bombardment in reactive ion etch and reactive ion beam etch reactors, respectively, have been studied for the first time using photothermal radiometry (PTR). A significant shift in measured PTR signal amplitude has been observed as a function of isochronal bias voltage variation (0–600 V) etching studies. The experimental results have been interpreted using a model for the photothermal radiometric response from a layered semiconductor material. The detection of a threshold effect for dry etch induced process defects in GaAs has been correlated with Raman spectroscopy measurements. Both theory and experimental results indicate that PTR has the requisite surface sensitivity to variations in lattice quality to be a suitable technique for rapid and noncontact process control monitoring of dry-etch-induced damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104623
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Average Rayleigh-wave velocity of a computer-simulated crystallographic plane (1986)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 19 (1986), S. 181-187 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: A model is proposed for calculating the Rayleigh-wave velocity as obtained by an acoustic lens, taking into account the anisotropy of the material under study and the profile of the miniature acoustic probe. The results obtained by this model on different `cuts' of single-crystal silicon agree with both those published in the literature and our own experimental results. In addition, the model has been applied to the non-destructive thickness measurement of opaque thin films deposited on different anisotropic substrates. More significantly, using the model and experimental acoustic material signature (AMS) curves obtained with this acoustic measurement system, the thickness of tungsten thin films deposited on silicon (100) have been measured. The results are in good agreement with measurements made using a Rutherford back-scattering technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889886089690
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...