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  • 1
    Electronic Resource
    Electronic Resource
    Direct quantitative measurement of compositional enrichment and variations in InyGa1−yAs quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3170-3172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Assessment of the composition of quantum dots on the nanoscale is crucial for a deeper understanding of both the growth mechanisms and the properties of these materials. In this letter, we discuss a direct method to obtain a quantitative evaluation of the In variation across nanometer-sized InGaAs quantum dots embedded in a GaAs matrix, by means of electron energy-loss spectroscopy in a scanning transmission electron microscope. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415414
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  • 2
    Electronic Resource
    Electronic Resource
    The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 950-952 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied high-resolution chemical imaging in a transmission electron microscope to study compositional variations across an InGaAs/InAlAs double quantum well structure in the (100) orientation. The structures of interest are grown on an InP support and consist of two 40 Å layers of InGaAs separated by 20 Å of InAlAs. For this (InGa)x(InAl)1−xAs system, we have obtained compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/4 unit cell. The results clearly show compositional irregularities on a monatomic scale. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119698
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation and characterization of MgO surfaces by reflection electron microscopy (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Microscopy Research and Technique 20 (1992), S. 426-438 
    Details
    ISSN: 1059-910X
    Keywords: Reflection high energy electron diffraction ; Surface topography ; Chemical polishing ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Natural Sciences in General
    Notes: We have employed several different methods to prepare (100) and (111) surfaces of MgO crystals. (100) surfaces prepared by simple cleaving give good reflection high energy electron diffraction (RHEED) patterns and surfaces with a high density of coarse steps. Chemical polishing of this surface results in a roughening of the topography whilst annealing in oxygen considerably smoothens the surfaces although they appear to be contaminated. Under certain conditions we find that the MgO crystals will cleave along the (111) plane. Both cleaved and mechanically polished (111) surfaces are atomically flat and reconstructed after oxygen annealing.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jemt.1070200412
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