ZIB

1

Electronic Resource

A rate equation model for the growth of GaN on GaN(0001¯) by molecular beam epitaxy (2000)

Held, R. ; Ishaug, B. E. ; Parkhomovsky, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 1219-1226

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: GaN(0001¯) films were grown by molecular beam epitaxy using ammonia and elemental Ga. The surface reactivity and growth kinetics of GaN(0001¯) were investigated as a function of growth parameters using desorption mass spectroscopy. Growth proceeds either by island nucleation or by step flow, depending on the steady state surface coverage of Ga. Three Ga adsorption states were found on the surface, one chemisorption and two weak states. One of the weak states corresponds to Ga adsorbed on a gallided surface, while the other corresponded to an intrinsic physisorption state on a hydrogen-passivated, nitrided surface. An abrupt growth mode transition between excess Ga and excess nitrogen was found as a function of growth parameters. The transition was modeled by rate equations based on growth at step edges and the three types of adsorption states. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.372000

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

2

Electronic Resource

Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics (2001)

Parkhomovsky, A. ; Dabiran, A. M. ; Benjaminsson, B. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 2315-2317

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: GaN grown by molecular-beam epitaxy on Ga-polar GaN templates prepared by metal organic chemical vapor deposition shows a variety of morphologies that depend on defects and growth conditions. We measured the mean terrace widths of hexagonal growth spirals or hillocks versus ammonia and Ga fluxes and substrate temperature. The measurements were compared to a near equilibrium model of the growth. The results indicate that under excess Ga growth conditions, Ga-polar GaN(0001) has a mean step-edge energy of 0.27 eV/Å. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1361278

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

3

Electronic Resource

Enhanced surface cation mobility on Sn delta-doped (Ga,Al)As (1992)

Petrich, G. S. ; Dabiran, A. M. ; Cohen, P. I.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 162-164

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: During the growth of GaAs and AlAs on vicinal GaAs(100) by molecular-beam epitaxy, reflection high energy electron diffraction was used to measure the transition temperature between two-dimensional nucleation and pure step propagation when submonolayer amounts of Sn were present on the surface. On samples misoriented by 0.5° to either the [011] or the [011¯] direction, the transition temperature decreased by approximately 100 °C after the deposition of 0.6 monolayers of Sn, indicating that the Ga mobility increased. The presence of Sn also increased the surface mobility of the Al adatoms on AlAs(100) surfaces as indicated by the annealing behavior of the AlAs surface at 600 °C.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108205

Permalink

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext