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  • 1
    Electronic Resource
    Electronic Resource
    Electronic Structures of Layered Polysilanes (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 1896-1899 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100007a017
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  • 2
    Electronic Resource
    Electronic Resource
    Photoelectron spectroscopy studies of Li1+xMn2−xO4 for Li ion battery applications (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4141-4152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using photoelectron spectroscopy (PES) we have studied the surfaces of Li1+xMn2−xO4 materials and related surface properties with the electrochemical performance of Li/Li1+xMn2−xO4 cells. The surface seems to be more lithium rich than the bulk as the amount of excess lithium is increased. A Li 1s component with binding energy of about 54.5 eV and a Mn 3p component with binding energy of about 47.6 eV are shown to be correlated with the undesirable 3.3 V discharge plateau in Li/Li1+xMn2−xO4 cells. Using a series of samples quenched from different temperatures we have also studied the surface composition at different temperatures. The PES results of a good performing sample, that cycles well even at a temperature as high as 55 °C are also shown. This shows that PES can be useful to qualify good spinel materials for Li-ion battery applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363287
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  • 3
    Electronic Resource
    Electronic Resource
    In situ growth of layered, spinel, and rock-salt LiCoO2 by laser ablation deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2799-2806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study is reported of the in situ growth of three distinct phases of LiCoO2 by laser ablation deposition on heated substrates in an oxygen background. Films were characterized by x-ray diffraction from which crystal structure, crystal orientation, lattice constants, and phase information were obtained. Electron microscopy was used to investigate crystal grain size and overall film morphology. For deposition under 2000 mTorr O2, substrate temperatures of 22–250 °C resulted in a rock-salt structure, 300–450 °C produced a modified spinel structure (low-temperature LiCoO2), and 680 °C gave a hexagonal layered structure (high-temperature LiCoO2). Growth at 500 and 550 °C produced mixed-phase spinel and layered LiCoO2; however, at 550 °C, reducing the O2 pressure to 100 mTorr resulted in single-phase high-temperature LiCoO2. In the case of the rock-salt phase, modified film stoichiometries of composition Li0.5Co1.5O2 and Li0.75Co1.25O2 were also produced by using ablation targets of the same composition and growing at 150 °C under 200 mTorr O2. Average crystal grain size for all films was found to increase with growth temperature. Ordering of the cations in rock-salt films by heating was unsuccessful.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357514
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray diffraction and x-ray absorption studies of porous silicon, siloxene, heat-treated siloxene, and layered polysilane (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1946-1951 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several porous silicon, siloxene (Si6H6O3), heat-treated siloxene, and layered polysilane (Si6H6) samples have been studied with K- and L-edge x-ray photoabsorption, photoemission, and powder x-ray diffraction. The x-ray absorption of layered polysilane and porous-Si are found to be remarkably similar. In particular, the K absorption edges of these samples shift by about 0.4–0.6 eV to higher energy relative to crystalline silicon. Siloxene samples heated to 400 °C in inert gas are best described as a mixture of SiO2 and amorphous-Si. When heat-treated siloxene is studied by photoelectron spectroscopy (surface sensitive) it resembles SiO2, when it is studied by x-ray absorption (bulk and surface) features from both SiO2 and amorphous-Si are observed and when it is studied by x-ray diffraction (bulk measurement) it resembles amorphous-Si. The SiO2 is therefore predominantly at the surface and heat-treated siloxene is very small amorphous-Si particles coated with SiO2. The Si L edge of heat-treated siloxene is not shifted significantly with respect to crystalline Si, unlike that of porous-Si, as-prepared siloxene, or layered polysilane. Taken together, these results suggest that heat-treated siloxene does not resemble electrochemically prepared porous-Si but that it might resemble rapid thermal annealed porous-Si. On the other hand, we believe that layered polysilane and unheated porous-Si may be related.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356342
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  • 5
    Electronic Resource
    Electronic Resource
    Nanodispersed silicon in pregraphitic carbons (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2363-2369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using chemical-vapor deposition nanodispersed silicon has been prepared in carbon at temperatures between 850 and 1050 °C. Samples with up to 11% atomic silicon in carbon show the same pregraphitic x-ray-diffraction pattern as those without silicon. X-ray-absorption spectroscopy shows that the silicon is bonded mostly to carbon neighbors and that large clusters of silicon are not found. It is believed that silicon atoms, or small clusters of a few silicon atoms, are located in regions of "unorganized carbon'' which separate small regions of organized graphene layers. These materials may have application as electrode materials in advanced rechargeable lithium batteries. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358759
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  • 6
    Electronic Resource
    Electronic Resource
    Use of carbon black to eliminate surface charging effects in photoelectron spectroscopy measurements of powders (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2262-2264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoelectron spectra of SiO2 on silicon powder is measured with and without the addition of carbon black. Samples without carbon black show significant charging and peak deformation due to photoelectron emission. Samples containing carbon black show no evidence of charging. Furthermore, the contribution from carbon black can be subtracted from the overall signal in the valence band region to give valence band spectra of insulating powders. It is suggested that mixing carbon black with nonconducting powders may be an effective way to eliminate surface charging effects while at the same time providing a useful calibration standard. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120045
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  • 7
    Electronic Resource
    Electronic Resource
    Thermogravimetric analysis to determine the lithium to manganese atomic ratio in Li1+xMn2−xO4 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2487-2489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Li1+xMn2−xO4 samples show reversible oxygen intercalation and deintercalation upon heating in the temperature range between 700 and 950 °C which can be monitored using thermal gravimetric analysis. There are two kinks, due to phase transitions, in the weight-temperature curve observed on heating. The temperature of the low-temperature kink depends linearly on x and therefore can be used to infer the sample stoichiometry. This provides a simple and straightforward quality control check on Li1+xMn2−xO4 samples for the lithium battery industry. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113143
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  • 8
    Electronic Resource
    Electronic Resource
    Photoelectron spectroscopy measurements of the band gap in porous silicon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2911-2913 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission and x-ray absorption spectroscopy show that both the conduction and valence bands of porous silicon are shifted relative to the bands for bulk silicon, as expected in the quantum confinement model for the optical properties of porous silicon. The shift in the valence band is larger than the shift in the conduction band and proportional to it, with a proportionality constant that is consistent with effective mass theory. No oxygen is detected in the as-prepared porous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110270
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  • 9
    Electronic Resource
    Electronic Resource
    Role of Coulomb repulsion in 4f orbitals in electrical excitation of rare-earth impurities in semiconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1296-1297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of the on-site Coulomb repulsion energy in the electrical excitation of rare-earth ions by minority carrier injection in semiconductors is examined. Resonant photoemission measurements of the interfacial electronic energy level alignment in NdF3/silicon heterojunctions show that the large Coulomb repulsion energy of the atomiclike 4f orbitals prevents the direct excitation of the 4f levels by either electron or hole capture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107570
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  • 10
    Electronic Resource
    Electronic Resource
    Evidence for quantum confinement in porous silicon from soft x-ray absorption (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3013-3015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of x-ray absorption in the vicinity of the silicon L edge in porous silicon show a blueshift and a broadening of the conduction band edge, consistent with a distribution of quantum confinement energies. The absorption spectrum for porous silicon can be fit by a broadened and energy-shifted version of the crystalline silicon absorption spectrum. The average quantum shift and broadening used in the fit to the absorption spectrum are in reasonable agreement with the corresponding parameters derived from the photoluminescence spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106793
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