ZIB

Treffer pro Seite

Treffer 1 - 1 | 1 Treffer

Sortierung

Digitale Medien

The role of surface in sputtered amorphous silicon: An oxidation study (1985)

Cutrera, M. ; Gennaro, A. M. ; Battioni, M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 4251-4255

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: High porosity amorphous silicon samples were produced by dc-sputtering in high argon pressure. Post-deposition oxidation and correlated effects were studied in order to elucidate the surface contribution to the measured properties. Infrared spectroscopy, used to follow the oxygen concentration during the oxidation process, allows us to detect the way in which the oxygen is attached. The electron spin density, absorption edge, and dark conductivity are measured in correlation with the oxygen content. We conclude that, for this material, dangling bonds are preferentially located near the inner surface of the porous structure. It is suggested that band bending is responsible for conductivity enhancement and two alternative mechanisms are proposed to explain the absorption edge shift.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.335560

Permalink

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 1 | 1 Treffer