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  • 1
    Electronic Resource
    Electronic Resource
    Reactive ion beam deposition of thin films in the bismuth-calcium-strontium-copper oxide ceramic superconductor system (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2186-2187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion beam deposition has been used to grow c-axis-oriented superconducting thin films in the Bi-Ca-Sr-Cu-O (BCSCO) system around the cation ratio 1:1:1:1 on single-crystal (001) MgO. The films show a single superconducting transition with an initial onset near 85 K and a critical current of 5×104 A/cm2 at 10 K. Two different BCSCO-containing phases have been identified in the thin films: one with a tetragonal pseudo-body-centered subcell, c=24.4 A(ring), which is not superconducting above 28 K, and a second with c=30.6 A(ring), which is responsible for the superconductivity. Electron diffraction measurements on the 30.6 A(ring) phase are consistent with those previously reported for the bulk ceramic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99764
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructural control of diamond thin films by microlithographic patterning (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4014-4019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microlithographic patterning has been used to elucidate the mechanisms controlling diamond film nucleation and grain growth. The approach is capable of establishing a degree of control over diamond nucleation on the substrate, which can be used to improve film uniformity and enhance fine grained microstructure. The observed microstructures in the patterned films are consistent with an intrinsic growth mechanism based upon defect-initiated renucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346237
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of diamond moth eye antireflective surfaces on Ge (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1388-1393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An antireflective coating on Ge which combines a polycrystalline diamond film with a surface relief (moth eye) structure has been designed and successfully fabricated. This progressive gradation in the effective refractive index between air and the substrate has reduced Fresnel reflection losses to below 1%. This provides a means of overcoming the high refractive index and surface roughness considerations that often limit optical application of polycrystalline diamond thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351259
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  • 4
    Electronic Resource
    Electronic Resource
    Microstructure and orientation effects in diamond thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6456-6460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and orientation of diamond thin films grown by plasma assisted chemical vapor deposition have been studied as functions of growth temperature, substrate identity, and substrate pre-treatment. Results indicate that for growth temperatures below 650 °C, competition between film growth and etching can lead to preferential (110) oriented films on a variety of substrate materials. This orientation can be globally sustained during growth by the occurrence of (111) planar defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348851
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  • 5
    Electronic Resource
    Electronic Resource
    Millimeter-wave dielectric properties of epitaxial vanadium dioxide thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 376-381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties of grain-oriented thin-film vanadium dioxide (VO2) on single-crystal sapphire have been measured as a function of temperature across the phase transformation at 68 °C. The properties of the low- and high-temperature phases were determined by measuring the millimeter-wave transmittance and phase shift through the samples. The real part of the dielectric constant in the high-temperature phase increases with increasing thickness from less than 1000 for a 40-nm-thick film (the resolvable limit of this measurement technique) to over 90 000 for a 580-nm-thick film. The strong thickness dependence in epitaxial VO2 thin films can be attributed to a dielectric mixture phenomenon and can be described by effective-medium theory. The large real dielectric constant and its thickness dependence is likely due to bonding distortions at the grain boundaries. Analysis of the experimental data shows the VO2 thin films used in this study have no secondary grain-boundary phases, but do have interfacial stresses which affect the dielectric properties of the grain-boundary regions that lie near the VO2-sapphire interface. This study concludes that the millimeter-wave properties of VO2 thin films are strongly influenced by microstructure, crystalline orientation, grain-boundary stress, and stoichiometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350285
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  • 6
    Electronic Resource
    Electronic Resource
    Direct observation of the defect structure of polycrystalline diamond by scanning electron microscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method has been demonstrated to directly observe the surface crystallography and defect structures in diamond films by scanning electron microscopy. Individual diamond crystals in the polycrystalline films are polished to a rms smoothness of less than 2 nm using iron metal at temperatures in excess of 725 °C. In the absence of topography, the detailed microstructure of the films can be characterized by secondary electron imaging in a scanning electron microscope by charge-induced electron contrast which shows strong beam voltage dependence. It is hypothesized that defects and grain boundaries form a connected pathway in the film which has greater conductivity than the generally insulating diamond and creates the charge-induced contrast.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109152
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  • 7
    Electronic Resource
    Electronic Resource
    Adhesion improvement in diamond films by microlithographic patterning (1992)
    Springer
    Journal of materials science 27 (1992), S. 553-556 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The use of microlithographic surface patterning has been investigated as a means of modifying the nucleation and adhesion of diamond films on non-compatible substrates. Significant improvements in film adhesion were achieved using this technique, to the point that interfacial integrity was maintained even at stress levels which induced subsurface fracture in the supporting substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00543949
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