Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 876-878
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Zn diffusions from spin-on films have been carried out into n-InP/p+-InGaAs/n-InP heterostructures, which were grown by metalorganic vapor phase epitaxy for heterojunction bipolar transistors with Mg as a p dopant. After diffusion, Mg was completely substituted by Zn and enriched in the spin-on film. In the presence of Mg, the indiffusion of Zn is strongly enhanced. By varying doping levels and diffusion conditions, the underlying mechanism is studied and compared to recent experiments with Be-doped AlGaAs/GaAs heterostructures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101627
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