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  • 1
    Electronic Resource
    Electronic Resource
    Inelastic neutron scattering studies of the origin of the incommensurate phase of quartz
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 156-157 (1989), S. 15-16 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(89)90572-3
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  • 2
    Electronic Resource
    Electronic Resource
    Neutron and calorimetric observation of a modulated structure in quartz just above the α-β phase transition
    Amsterdam : Elsevier
    Physica B+C 120 (1983), S. 280-282 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(83)90391-1
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  • 3
    Electronic Resource
    Electronic Resource
    Diffuse x-ray scattering from p+ porous silicon by triple axis diffractometry (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain and microstructure of porous silicon on (001) wafers with different porosity were investigated by triple axis x-ray diffractometry using an instrumental resolution of 12 arcsec. The Bragg diffraction peaks arising from the porous Si contain information both on the mean strain (1.29–2.95×10−3) and on strain gradients (0.70–1.42×10−3) in these samples. In specimens with a porosity of 60% the pores are shown to be elongated over about 200 nm along the [001] direction, and over 50 nm in directions parallel to the growth plane. It is demonstrated that the correlation function for the pores has an extension along the [001] direction which is about a factor of 4 larger than along the [010] direction. From measurements of the intensity distribution of diffuse x-ray scattering a crystallographical damage in the silicon skeleton can be excluded. Regions of the porous layer near the interface to air are shown to be tensilely strained both along and perpendicular to the substrate normal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112026
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray-diffraction investigation of the anodic oxidation of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8060-8070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of porous silicon anodic oxidation is reported. We have studied the evolution of the lattice parameter versus oxidation levels for p- and p+-type materials by using high-resolution x-ray diffraction, which gives a determination of the strains of the porous layer. The analysis of an asymmetric reflection enables us to measure the lattice parameter parallel to the surface. Moreover a diffuse scattering, observed at the bottom of the Bragg peaks, comes from the porous structure. The study of this diffuse scattering with reciprocal space maps gives information about the pore size and shape. It is shown that the evolution of the lattice mismatch parameter is related to the surface stress variations. After a review of previous works on porous silicon strains and on surface stresses of silicon we discuss the origin of the strains of as-formed and oxidized porous silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362360
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  • 5
    Electronic Resource
    Electronic Resource
    Origin of a parasitic surface film on p+ type porous silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6659-6666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence of a parasitic surface film of 80 nm thickness has been observed by x-ray reflectivity on the top of some p+ type porous silicon layers, related to a contamination of the substrate. After testing several methods to clean the substrate and to avoid this film, it was found that a 300 °C thermal annealing of the substrate is sufficient to obtain a homogeneous porous layer. The thickness of the perturbed surface layer is determined by anodic oxidation experiments and the effect of the parasitic surface film on the porous silicon formation is studied by comparing porous layers formed on untreated and on annealed substrates. The hypothesis of a passivation of the boron doping atoms by hydrogen is discussed and we review the observations of nonhomogeneous porous layers which could be related to such a contamination problem. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369041
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray diffraction investigation of n-type porous silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 174-180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution x-ray diffraction has been used to study the effect of doping level and illumination on the formation of n-type porous silicon. For highly doped n+-type porous layers prepared in darkness, an unusual increase of the lattice mismatch with the formation time is observed. When the samples are prepared under illumination, a degradation of the crystal quality, increasing with a decrease of the material doping level, is observed. The possible origins of these effects are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326857
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray diffraction investigation of the low temperature thermal expansion of porous silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2131-2136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high resolution x-ray diffraction, the porous silicon lattice parameter was measured in vacuum, as a function of temperature in the range 90–300 K, showing that the thermal expansion of porous silicon is larger than that of bulk silicon. We then estimate the differential thermal expansion coefficient δα of p+-type porous silicon samples of various porosity (from 60% to 80%). Between 90 and 250 K, δα is constant as a function of the temperature but increases linearly with the sample porosity. The porous silicon thermal expansion is related to the temperature variation of the silicon nanocrystallite surface stress. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372151
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  • 8
    Electronic Resource
    Electronic Resource
    Porous silicon strain during in situ ultrahigh vacuum thermal annealing (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7105-7111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ synchrotron radiation measurements of porous silicon (PS) strain have been performed during ultrahigh vacuum (UHV) thermal annealing. For a p+ sample, the initial lattice expansion shifts toward a contraction above 270 °C in relation with hydrogen desorption. For a p− sample, the strain variation is similar to that of a p+ one, but with effects five times larger: after hydrogen desorption, the contraction strain is large (〉1.5%) and inhomogeneous. In both cases, most of these strains are elastic as an HF etch re-establishes the initial expansion with a narrow diffraction peak. For p+ samples, the lattice constant exhibited a slow variation during subsequent exposure to air due to a slow oxidation of the annealed porous samples. The origin of these strain variations is discussed in relation with the presence of hydrogen or oxide coverage. The observation of similar variations in other PS properties is also discussed. Finally, the absence of a strain effect during the introduction of water vapor in UHV is discussed as possibly due to a contamination of the PS sample by residual water during the long time passed under UHV at high temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370518
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray diffuse scattering of p-type porous silicon (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2742-2752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray diffuse scattering investigation of p-type porous silicon (PS) is reported. Synchrotron radiation and laboratory measurements of the x-ray diffuse scattering at small and large scattering wave-vector q values are presented. At small q values and for p−-type material, small isotropic crystallites of a few nanometers diameter are shown, whereas for p+-type material the main cylindrical crystallites are larger. At large q values the fine p+ PS structure is investigated and reveals the presence of small spherical crystallites around the main cylindrical crystallites. The elastic relaxation of silicon crystallites in the porous structure is also presented for oxidized and for as-formed samples, using reciprocal space maps. PS superlattice diffuse scattering is then observed. Finally, these results are discussed in relation to previous x-ray studies and other methods of structural observation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429791
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  • 10
    Electronic Resource
    Electronic Resource
    Thin layers and multilayers of porous silicon: X-ray diffraction investigation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5814-5822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon is a unique example of a porous material exhibiting the properties of a nearly perfect single crystal. High resolution x-ray diffraction has been used to investigate thin p− and p+ type porous silicon layers in the 100–1000-nm-thickness range. Since several thickness fringes are observed, the comparison between experimental results and simulations enables one to deduce information about the main structural parameters such as porosity, lattice parameter, thickness, and heterotransition width. Porous silicon multilayers have also been investigated: some satellites are clearly observed. The obtained results are then compared and discussed with the literature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367438
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