Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 1871-1875
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The wet oxidation of magnetron-sputtered x-ray-amorphous Ti34Si23N43 films at temperatures from 500 to 1000 °C and ambient pressure was investigated by backscattering spectrometry, x-ray diffraction analysis, and step profilometry. Up to 800 °C, the oxidation yields x-ray-amorphous oxide scales of atomic composition Ti20Si13O67. At 500 and 550 °C the oxide growth kinetics is parabolic. At 700 and 800 °C, the oxidation kinetics is well described by a logarithmic time dependence. At 1000 °C, the oxide scale has a layered structure with a crystalline TiO2 layer on top of Ti–Si–O. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369342
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