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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 84-86 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied electrical parallel and perpendicular transport in thin epitaxial erbium silicide films obtained by solid phase reaction and by codeposition of Er and Si on (111) Si. Resistivity measurements show that the silicide is metallic with a room-temperature resistivity of 34 μΩ cm; the dependence of the Hall coefficient on temperature can be explained by a two-band conduction model. Magnetic effects are shown to affect the low-temperature resistivity and the Hall coefficient. Perpendicular transport properties are studied by electrical [current-voltage I(V) and capacitance-voltage C(V) characteristics] and internal photoemission methods on erbium silicide/n- or p-type Si diodes. The p-type diodes have a perfect rectifying behavior with a Schottky barrier height of about 0.74 eV measured by I(V) and photoemission methods. The n-type junction is ohmic at room temperature and rectifying at low temperatures; C(V) and optical measurements yield a Schottky barrier height of about 0.28 eV. Some potential applications of erbium silicide/Si heterostructures are presented.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 960-962 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the realization of etched mirror facets in GaN cavities by chemically assisted ion-beam etching. The etching conditions are adjusted to obtain a high degree of verticality and smoothness. Optical pumping experiments and gain measurements are performed in etched GaN cavities of various geometries. Stimulated emission and lasing are observed. The study of the value of the gain at threshold as a function of the cavity length allows a determination of the reflection coefficient of the etched mirror. The measured value of 15% is in good agreement with the one expected for a perfect air–GaN interface. This demonstrates the high quality of the etched mirror facets. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2803-2807 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, the efficient tuning of the carrier capture efficiency of quantum well by introducing a barrier asymmetry was demonstrated [J. M. Gérard, Appl. Phys. Lett. 63, 240 (1993)]. The electron launching effect was proposed to improve the gain of multiquantum well detectors. In this article, we give experimental results on the dark current, noise, optical gain, responsivity, and detectivity of barrier asymmetric quantum well detectors. We confirm that the electron launching reduces the capture efficiency and thus improves the gain. In addition to this effect, the modification of the barrier potential profile induces a dark current reduction and a blue shift of the intersubband transition. All these effects are then taken into account for analyzing detector performances. As a result of the comparison between symmetric and asymmetric detectors, we do not see any net advantage of using asymmetric structures for improving detector performances. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband absorption saturation in GaAs/AlGaAs quantum wells as a function of the incident power has been measured, using picosecond micropulses with a power density up to 1 GW/cm2 delivered by a free-electron laser. The absorption in a sample with a bound-to-bound transition was compared to the absorption in a sample with a bound-to-resonant transition, and it was found that the electron relaxation time in the bound-to-bound transition is about four times shorter than for the bound-to-resonant transition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband photoresponse in GaAs/AlGaAs quantum-well detectors has been measured with a free-electron laser delivering picosecond pulses. The saturation of the detector photocurrent with increasing power was observed. A model is presented that takes the absorption saturation and transport properties into account and allows the electron lifetime determination from the photocurrent saturation. The electron lifetime is found to increase with the electric field applied in the detector from 1 ps at low field up to 10 ps or more at high field (15 kV/cm). Effects of doping and well asymmetry are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 788-790 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical measurements (resistivity, Hall effect, and superconducting critical temperature) are performed in epitaxial CoSi2 layers obtained by room-temperature codeposition of Co and Si on 〈111〉 Si subsequently annealed between 250 and 650 °C. On the one hand, the CoSi2 layers annealed at low temperature (250–350 °C) exhibit poorer electrical characteristics than the films realized by solid phase epitaxy at 650 °C, because of both a lack of carriers and a degraded mobility. A possible origin of this fact could be the presence of unreacted Co atoms in the metal layer. On the other hand, the films annealed ex situ at 700 °C show excellent electrical characteristics, together with mirror-like surfaces and extremely smooth Si/CoSi2 interfaces, for silicide thicknesses ranging from 35 up to 500 A(ring). Furthermore, by comparing the films obtained by the solid phase epitaxy and the codeposition techniques, we show that the long-range roughness (few hundreds of angstroms) has no major influence on the steep increase of resistivity with decreasing film thicknes observed in ultrathin CoSi2 layers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 446-454 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a new model for the simulation of quantum well infrared photodetectors (QWIPs) both in dark conditions and under illumination. This model takes into account the elementary mechanisms involved in the detection process (injection at the contacts, balance between capture and emission in each well) in a self-consistent way. The main feature emerging from the model is the redistribution of the electric field along the structure in order to maintain current conservation. The calculated dark current, electrical noise, responsivity, and detectivity of different QWIP structures are compared with experimental measurements and the agreement is found to be fairly good. This model may be considered as a step toward more powerful simulation tools for QWIPs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2346-2350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission and reflection measurements in the energy range 0.5–1 eV have been performed on thin CoSi2 films grown by molecular-beam epitaxy on Si(111). For film thicknesses above 200 A(ring), the transmission factor decreases exponentially with film thickness, with an optical attenuation length of 180 A(ring) nearly independent of photon energy. Deviations from this law for film thicknesses below 200 A(ring) are explained by reflection effects. These data, supplemented by reflection measurements, can be fitted by theoretical calculations of the transmission and reflection factors, thus leading to the determination of the CoSi2 optical indexes. The energy dependence of the real and imaginary indexes is found to be consistent with the Drude model. Some interesting aspects of this intraband absorption either in ultrathin films or at low temperature are presented.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5432-5443 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcavity effects can apply to intersubband transitions if the polarization selection rules are satisfied. We thus propose to insert a grating in a planar microcavity and to take advantage of both the field enhancement due to the cavity and the coupling with intersubband transitions due to the grating. The electromagnetic coupling is reinforced when both the grating and the cavity are resonant with the light wavelength. Accordingly, the spectral width is reduced where the coupling is efficient, which may provide additional advantages for some applications. Various configurations are envisioned and calculations are carried out for dielectric and metallic gratings. These architectures can be used for infrared detection, emission or modulation. Efficient and realistic devices are proposed and optimized. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6449-6454 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report on the characterization of a photovoltaic detector based on an n-type GaN Schottky barrier. We first present the photovoltaic responsivity above the gap. Its spectrum is explained by the combined effects of absorption and diffusion. The hole diffusion length is estimated to be in the 0.1 μm range with a numerical model. The photoresponse below the gap is also investigated and it is shown that the current generated by the internal photoemission is the major contribution to the photocurrent at reverse biases at 80 K. At room temperature, an additional component to the photocurrent is clearly demonstrated and identified. This extra current stems from the existence of traps. Several spectroscopy techniques are used to characterize those traps. The supplementary current emitted from the traps in the depletion region accounts for the spectral and the temporal behavior of the Schottky photodetector at room temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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