Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Optical and Electrical Properties of Iron Disilicide with Different Degree of Structural Perfection (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 341-346 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.51-52.341.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A study of epitaxially stabilized FeSi2 by surface enhanced Raman scattering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1968-1970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially stabilized films with the defect CsCl structure, that were grown by molecular beam epitaxy, have been studied by surface enhanced Raman scattering using a silver overlayer. We have observed that the defect-induced phonon density of states features in the Raman signal shift from 256 cm−1 for a coherently strained film to 263 cm−1 for a relaxed one. The lower energy observed for the former can qualitatively be explained by the expansive trigonal distortion arising from the misfit of −0.5%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357658
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Observation of the reduction of methylviologen at silver and .beta.-zinc phosphide (.beta.-ZnP2) electrodes by Raman scattering (1987)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 91 (1987), S. 663-668 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100287a033
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Strain relaxation of Si/Ge multilayers: Coherent islands formation and their evolution as a function of the strain (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1441-1447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a structural study of Si/Ge multilayers grown by molecular-beam epitaxy on (100)-Si substrates. The analyses have been performed by using transmission electron microscopy, high-resolution x-ray diffraction, and secondary-ion-mass spectrometry. The investigated specimens differ in number of periods, period thickness, and in the Si/Ge periods thickness ratio. In particular, we investigate the interdiffusion of the Ge atoms in each superlattice period of the epilayer and in the epilayer as whole. The interdiffusion causes a broadening of the nominal thickness of the Ge layer producing a SixGe1−x alloy. Furthermore, the Ge content in the multilayer periods increases as a function of the growth time, i.e., the superlattice periods close to the sample surface contain more Ge atoms if compared to the periods close to the substrate/superlattice interface. We find two steps in the strain relaxation: (i) In each period the strain energy density is partially reduced by the formation of coherent islands; (ii) at a certain value of the strain energy density the shape of the islands changes and the structures relax partially or completely the accumulated strain energy by nucleation of extended defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360982
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Tunable infrared detector with epitaxial silicide/silicon heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8798-8807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CoSi2/Si/CoSi2 and CoSi2/Si/poly-PtSi heterostructures were grown with molecular-beam epitaxy onto Si(111). Characterization of the heterostructures with scanning tunneling microscopy, Rutherford backscattering spectrometry, and transmission electron microscopy revealed very high structural quality. We report on the application of these heterostructures to a wavelength-tunable infrared detector. It consists of two back-to-back Schottky contacts separated by the thin (1000–2000 A(ring)) undoped Si spacer layer. The different Schottky barrier heights which photocreated charge carriers in the silicides have to surmount can be used to control the cutoff wavelength by simply varying the applied bias across the structure. Photoelectric measurements of so-called symmetrical sensors made of CoSi2/Si/CoSi2 where both silicides contribute equally to the photocurrent, yielded a bias dependence of the cutoff energy three times as large as predicted by the conventional Schottky effect. In this case, the observed tunability of the cutoff energy can be explained only by considering ballistic transport of photocreated carriers (holes and electrons) in the silicon. Different mean free path lengths of hot electrons and holes in Si lead to a strongly bias-dependent ratio of the collected photoelectrons and photoholes. Photocurrents measured in asymmetrical sensors made of CoSi2/Si/PtSi were found to change phase as a function of light energy at a constant bias. This change of photocurrent direction can also be understood with the proposed energy band diagram and ballistic transport of hot carriers in Si. This kind of device showed a tunability of the cutoff energy between 0.3 and 0.5 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362505
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Ferromagnetic resonance and Brillouin light scattering from epitaxial FexSi1−x films on Si(111) (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6897-6897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of epitaxial FexSi1−x films on Si(111) have been determined by means of ferromagnetic resonance (FMR) and Brillouin light scattering (BLS). The investigated films are (111) oriented, with thicknesses h=150 A(ring), 250 A(ring), 710 A(ring), and Fe concentrations x=0.75, 0.79, and 0.75, respectively. All experiments have been carried out at room temperature. For BLS, the frequencies of both surface and bulk magnons have been measured as a function of the external in plane field H and the in plane direction of magnon propagation versus the main crystallographic axis. Moreover, the wave vector dependence has been used to identify the surface and bulk magnons present in the thicker films. FMR has been used in the parallel configuration (PC) and normal configuration (NC), where the external applied field lies in the sample plane and normal to the sample, respectively. Several waveguide setups were used to cover the frequency range from 18 to 92 GHz. For the numerical analysis we used the resonance conditions for a thin single crystalline film grown in the (111) plane. From our fits we obtained for the Landé g value 2.1, for the saturation induction 4πMs=8.8 kG, 10.7 kG, 13.7 kG for h=150 A(ring), 710 A(ring), and 250 A(ring), respectively. The magnetic parameters have been found to depend strongly on the Fe concentrations and FexSi1−x-Si substrate interface interdiffusion. The magnetic parameters of epitaxial FexSi1−x films are in agreement with the data obtained from single crystals by Hines et al. The Landau–Lifshitz FMR relaxation constant is very small, ranging from 5 to 8×107 rad/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358107
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Investigation of the defect structure of thin single-crystalline CoSi2 (B) films on Si(111) by transmission electron microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3220-3236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin epitaxial single-crystalline B-type CoSi2 films (twin-oriented) have been grown in ultrahigh vacuum by stoichiometric codeposition of Co and Si on slightly misoriented (0.1°–0.3°) Si(111) substrates. The microstructure as well as the nature of interfacial defects has been investigated in detail by transmission electron microscopy. The defect structure is found to depend closely on the initial deposition parameters, annealing temperature, and the topography of the Si substrate. It will be shown that even during the early stages of layer growth, loss of coherence is obtained and lattice strain already starts to occur with the introduction of misfit dislocations with Burgers vector b=a/2〈110〉 inclined to the interface or with Burgers vector b=a/6〈112〉 parallel to it. It is demonstrated that ultrathin CoSi2 films with thickness of about 1 nm grown on slightly misoriented substrates with parallel surface steps, exhibit quite different defect structures at annealing temperatures between 300 °C and 550 °C. Control of the dislocation density has been obtained by applying a two-step growth procedure. CoSi2 layers grown to a thickness 〈hc (4–5 nm) exhibit line defects with Burgers vector b=a/6〈112〉 associated with interfacial misorientation-related steps. Above this thickness additional dislocations in the three equivalent directions are formed, indicating biaxial strain relaxation. In addition, calculations of the critical thickness hc of biaxial strain relaxation based on thermodynamic equilibrium theory are presented. It is shown that the observed critical thickness hc is in qualitative agreement with theoretical predictions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352966
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electrical transport properties in epitaxial codeposited CoSi2 layers on 〈111〉 Si (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 788-790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical measurements (resistivity, Hall effect, and superconducting critical temperature) are performed in epitaxial CoSi2 layers obtained by room-temperature codeposition of Co and Si on 〈111〉 Si subsequently annealed between 250 and 650 °C. On the one hand, the CoSi2 layers annealed at low temperature (250–350 °C) exhibit poorer electrical characteristics than the films realized by solid phase epitaxy at 650 °C, because of both a lack of carriers and a degraded mobility. A possible origin of this fact could be the presence of unreacted Co atoms in the metal layer. On the other hand, the films annealed ex situ at 700 °C show excellent electrical characteristics, together with mirror-like surfaces and extremely smooth Si/CoSi2 interfaces, for silicide thicknesses ranging from 35 up to 500 A(ring). Furthermore, by comparing the films obtained by the solid phase epitaxy and the codeposition techniques, we show that the long-range roughness (few hundreds of angstroms) has no major influence on the steep increase of resistivity with decreasing film thicknes observed in ultrathin CoSi2 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100560
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Optical, electrical, and photoelectrical properties of sputtered thin amorphous Zn3P2 films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7448-7455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous zinc-phosphide films have been prepared by reactive rf sputtering of zinc in a PH3-containing argon atmosphere. Transmittance and reflectance measurements were used to calculate the refractive index n and the extinction coefficient k as functions of wavelength. The absorption coefficient α was calculated and an optical gap of 1.60 eV was deduced. The benchmark energy E04, where the absorption reaches 104 cm−1, is at 1.75 eV. The measurement of the dark conductivity yielded an activation energy around 0.7 eV, near optical midgap. The magnitude of the pre-exponential factor of the conductivity and the sign of the thermopower indicate that carrier transport is due to conduction in extended valence-band states. The photoconductivity is much higher than the dark conductivity at room temperature. A gain of 103 was obtained by illumination with 100 mW cm−2 white tungsten lamp radiation. From the temperature dependence of the photoconductivity, activation energies of 0.18 and 0.3 eV can be deduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356613
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Ion channeling studies of epitaxial Fe and Co silicides on Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7256-7264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial Co and Fe silicides have been grown by molecular beam epitaxy on Si(111) and Si(001) substrates with film thicknesses ranging between 25 and 8400 A(ring). We used Rutherford backscattering spectrometry channeling techniques to measure the lattice distortion as a function of film thickness. The critical thickness hc corresponding to the film thickness at which strain relieving dislocations begin to appear was determined for CoSi2 on Si(111) and Si(001) as well as for Si on CoSi2(111). For CoSi2 on Si(001), a larger critical thickness was obtained than on Si(111), where hc is ∼45 A(ring). Epitaxial Si on CoSi2(111) was found to be under a compressive strain up to thicknesses of about 350 A(ring) depending on substrate misorientation. Strain measurements were also performed on epitaxially stabilized Co and Fe monosilicides with the CsCl structure. Channeling measurements on thick epitaxial films of bcc-Fe, Fe3Si, FeSi, and Fe0.5Si were used to determine the crystalline quality. Excellent channeling minimum yields of 4.0% were found for bcc-Fe/Si(111). The results are compared with structural information obtained from x-ray diffraction and Brillouin scattering spectroscopy. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358007
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...