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  • 1
    Electronic Resource
    Electronic Resource
    Optical study on ultrathin InAs/InP single quantum wells (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1367-1370 
    Details
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457211
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  • 2
    Electronic Resource
    Electronic Resource
    Strain relaxation of Si/Ge multilayers: Coherent islands formation and their evolution as a function of the strain (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1441-1447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a structural study of Si/Ge multilayers grown by molecular-beam epitaxy on (100)-Si substrates. The analyses have been performed by using transmission electron microscopy, high-resolution x-ray diffraction, and secondary-ion-mass spectrometry. The investigated specimens differ in number of periods, period thickness, and in the Si/Ge periods thickness ratio. In particular, we investigate the interdiffusion of the Ge atoms in each superlattice period of the epilayer and in the epilayer as whole. The interdiffusion causes a broadening of the nominal thickness of the Ge layer producing a SixGe1−x alloy. Furthermore, the Ge content in the multilayer periods increases as a function of the growth time, i.e., the superlattice periods close to the sample surface contain more Ge atoms if compared to the periods close to the substrate/superlattice interface. We find two steps in the strain relaxation: (i) In each period the strain energy density is partially reduced by the formation of coherent islands; (ii) at a certain value of the strain energy density the shape of the islands changes and the structures relax partially or completely the accumulated strain energy by nucleation of extended defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360982
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    Paper (German National Licenses)
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