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  • 1
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Recent theoretical and experimental work on linear exciton-light coupling in single and coupled semiconductor microcavities is reviewed: emphasis is given to angular dispersion and polarization effects in the strong-coupling regime, where cavity-polariton states are formed. The theoretical formulation is based on semiclassical theory. The energy of single-cavity modes is determined by the Fabry-Pérot frequency ω c as well as by the center of the stop band ω s of the dielectric mirrors; the phase delay in the dielectric mirrors carries a nontrivial angle-and polarization dependence. The polarization splitting of cavity modes depends on the mismatch between ω c and ω s, and increases with internal angle as sin2 θ eff. Interaction between the cavity mode and quantum-well (QW) excitons is described at each angle by a two-oscillator model, whose parameters are expressed in terms of microscopic quantities. Weak and strong coupling regimes and the formation of cavity polaritons are described. Comparison with experimental results on a GaAs-based cavity with In0.13Ga0.87As QWs shows that a quantitative understanding of polariton dispersion and polarization splitting has been achieved. Coupling of two identical cavities through a central dielectric mirror induces an optical splitting between symmetric and antisymmetric modes. When QW excitons are embedded in both cavities at antinode positions, the system behaves as four coupled oscillators, leading to a splitting of otherwise degenerate exciton states and to separate anticrossing of symmetric and antisymmetric modes. These features are confirmed by experimental results on coupled GaAs cavities with In0.06Ga0.94As QWs. An analysis of reflectivity lineshapes requires the inclusion of the effect of resonance narrowing of cavity polaritons. Finally, the polarization splitting in a coupled cavity depends both on the single-cavity factors and on the angle-and polarization dependence of the optical coupling between the cavities. Inclusion of all these effects provides a good description of the experimental findings.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 1473-1486 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Polaritons (including photon-photon and photon-magnon interactions) ; Level splitting and interactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Nella teoria degli eccitoni di Wannier, la parte a lungo raggio e non analitica dell’interazione di scambio è generalmente espressa in termini dell’elemento di matrice di dipolo fra funzioni di Wannier. Noi mostriamo che può invece essere espressa in termini dell’elemento di matrice di dipolo fra funzioni di Bloch al centro della zona di Brillouin, senza assumere che le funzioni di Wannier siano localizzate. Otteniamo quindi un’espressione per lo splitting longitudinale-trasverso in termini dell’elemento di matrice di dipolo fra stato fondamentale del cristallo e stato eccitonico. Ciò è necessario per dimostrare che il polaritone trasverso del ramo superiore è degenere con l’eccitone longitudinale nel limitek ex→0. Otteniamo inoltre una nuova espressione per la parte a corto raggio dell’interazione di scambio, che è più appropriata per un calcolo microscopico e che calcoliamo nel caso del CuCl. Otteniamo un parametro di scambioΔ ex = 12.6 meV, in buon accordo col valore sperimentale.
    Abstract: Резюме В теории экситонов Ваннье дальнодействуйщая неаналитическая часть обменного взаимодействия обычно выражается через дипольный матричный элемент между функциями Ваннье. Мы показываем, что эта часть обменного взаимодействия может быть выражена через дипольный матричный элемент между функциями Б=qlоха без каких-либо предположений о локализации функций Ваннье. Мы получаем выражение для продольно-поперечного расщепления в терминах дипольного матричного элемента между основным состоянием кристалла и экситонным состоянием. Это выражение требуется, чтобы доказать, что поперечный поляритон является вырожденным с продольным экситоном в пределеk ex→0. Получается новое выражение для короткодействующей части обменного взаимодействия, которое более удобно для микроскопических вычислений и которое оценивается для случая CuCl. Вычисляется обменный параметрΔ ex = 12.6 мэВ, который хорошо согласуется с экспериментальной величиной.
    Notes: Summary In the theory of Wannier excitons, the long-range nonanalytical part of the exchange interaction is usually expressed in terms of the dipole matrix element between Wannier functions. We show that it can be expressed in terms of the dipole matrix element between zone-centre Bloch functions, without any assumption on the localization of Wannier functions. We obtain an expression for the longitudinal-transverse splitting in terms of the dipole matrix element between the crystal ground state and the excition state. This is required in order to prove that the transverse upper polariton is degenerate with the longitudinal exciton in the limitk ex→0. A new expression for the short-range part of the exchange interaction is also obtained, which is more suitable for microscopic calculations and which is evaluated for the case of CuCl. The resulting exchange parameter isΔ ex = 12.6 meV, which compares well with the experimental value.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1651-1656 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Polaritons (including photon-phonon and photon-magnon interactions) ; III–V semiconductors ; Cooperative phenomena ; superradiance and superfluorescence ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We study excitons in double quantum wells (DQWs) embedded in a semiconductor microcavity (MC) by means of semi-classical theory, which yields analytic results in weak- and strong-coupling regimes. We show how to obtain subpicosecond radiative lifetime for the excitons. A model for disorder is investigated.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 7 (1986), S. 55-69 
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presentano le soluzioni esatte del problema quantistico del polaritone con dispersione spaziale. Gli autostati polaritonici esatti sono ottenuti come combinazioni di stati fotonici e di stati di polarizzazione. Contributi non lineari di fotoni e di quanti di polarizzazione sono presenti a tutti i valori dik. Componenti a due fotoni e a tre fotoni sono date in forma esplicita.
    Notes: Summary We give the exact solution of the quantum polariton problem with spatial dispersion. The exact polariton eigenstates are obtained in terms of photon and polariton states. For all values ofk a nonlinear contribution of the photon and polarization states is present in the polariton wave function. Two- and three-photon components are explicitly singled out.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 847-859 
    ISSN: 0392-6737
    Keywords: Semiconductor-to-semiconductor contacts,p-n junctions ; Excitons and related phenomena (including electron-hole drops)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presenta uno studio sistematico della luminescenza e della riflettività di strutture a buche quantiche multiple di GaAs/Ga1−x Al x As da 12K a temperatura ambiente. Un confronto diretto tra i picchi di fluorescenza dovuti a stati nelle buche quantiche e a quelli nell'arseniuro di gallio, cosí come il confronto tra fotoluminescenza e riflettività, forniscono una prova diretta del ruolo degli eccitoni a tutte le temperature. L'analisi spettrale della fluorescenza a temperatura ambiente ci consente di identificare il contributo degli eccitoni di buca pesante, degli eccitoni di buca leggera e degli stati del continuo. Un'analisi dettagliata delle energie di transizione in funzione della temperatura mostra che l'energia di confinamento aumenta del 5% quando la temperatura aumenta da 12K a temperatura ambiente. Questo effetto è dovuto alla variazione delle masse effettive dell'elettrone e della buca.
    Abstract: Резюме Мы исследуем фотолюминесценцию и отражение структур множественных квантовых ям в GaAs/Ga1−x Al x As в области от 12K до комнатной температуры. Прямое сравнение между эмиссионными пиками для квантовых ям и для объема арсенида галлия, а также между спектрами фотолюминесценции и отражения обнаруживает наличие экситонных особенностей при всех исследованных температурах. Подгоняя форму линий для спектра фотолюминесценции при комнатной температуре, мы определяем вклад экситонов тяжелых дырок, экситонов легких дырок и состояний непрерывного спектра. Из подробного анализа энергий перехода в зависимости от температуры показывается, что энергия удержания увеличивается на 5% при возрастании температуры от 12K до комнатной температуры. Отмечается, что этот эффект обусловлен изменением эффективных масс электрона и дырки.
    Notes: Summary We report a study of photoluminescence and reflectivity of GaAs/Ga1−x Al x As multiple quantum well structures from 12 K to room temperature. A direct comparison between the emission peaks of the quantum wells and of bulk GaAs, as well as between the photoluminescence and reflectance spectra, shows strong evidence of exciton features up to room temperature. By means of a line shape fit of the room temperature emission spectrum, we determine the contribution of the heavy and light hole excitons and of the continuum states. From a detailed analysis of the transition energies, a 5% increase of the confinement energy is found to occur when the temperature increases from 12 K to room temperature. This effect is shown to be due to the change in the electron and hole effective masses.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1367-1370 
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1505-1508 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; III-V and II-VI inorganics ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A model for calculating exciton binding energies in quantum wells (QWs) is presented, which can be applied to situations in which one of the two band discontinuities is large, while the second one can be arbitrary (positive, negative, or zero). The model is applied to ZnSe/ZnSSe and InGaAs/GaAs QWs., The crossover between strong-and weak-confinement, regimes for excitons in narrow QWs is studied within a simplified model with two one-parameter, variational wave functions.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1211-1218 
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions) ; Electrons states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; III–V and II–VI inorganics ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A description of polariton effects on excitons in multiple quantum wells (MQWs), superlattices (SLs), and semiconductor microvavities is presented. The non-local semi-classical theory in a transfer matrix formulation is adopted. The radiative width in MQWs atk=0 increases first with the number of wellsN, then goes to zero asN→∞, where stationary SL polaritons are recovered. The crossover from weak- to strong-coupling regimes for QW excitons in microcavities is described. The complex energies of the mixed exciton-radiation modes are shown to be measurable by time-resolved transmission experiments.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1713-1716 
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions) ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; III–V and II–VI inorganics ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A quantum-mechanical model for quantum well polaritons in semiconductor microcavities is presented. The real and imaginary parts of the polariton dispersion are obtained. They represent, respectively, the position and the linewidth of the luminescence peaks observed in typical experiments. The model includes the features of the distributed Bragg reflectors which constitute the cavity mirrors, and has the advantage of describing the weak-coupling as well as the strong-coupling regimes characteristic of this kind of systems. Furthermore, in the limit where no cavity is present, the well-known result for quantum well polaritons is recovered.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 865-872 
    ISSN: 0392-6737
    Keywords: Elemental semiconductors (crystalline) ; Composite materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report absorption measurements on Ge nanoparticles in the range 0.6–6 eV. By reducing the dot average radius to about 13 Å, one observes a relevant blue-shift of theE 1+Δ 1 andE 2 peaks and a change of the oscillator strength of the two main structures. Simulations using effective-medium theories have been carried out and the embedding matrix contribution to the measured properties has been evaluated. The different behaviour of the absorption peaksE 1,E 1+Δ 1 andE 2 under quantum confinement has been related to their specific nature within the whole Brillouin zone.
    Type of Medium: Electronic Resource
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