ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Properties of PbS1−x Se x , epilayers deposited onto PbS substrates by hot-wall epitaxy (HWE) have been investigated. By compensating with a secondary selenium vapour source, both n- and p-type epilayers with carrier concentrations up to 1018 cm−3 have been obtained. Alloy compositions were determined using an X-ray method and found to be dependent upon the selenium furnace temperatures used during growth. Diodes were fabricated from wafers consisting of n-type substrates and p-type PbS1−x Se x epilayers of various compositions. Typical R 0 A products are 5 ω cm2 for x=0.70. Microprobe analysis indicated that the junctions are abrupt. Diode properties were found to be strongly dependent upon the qualities of the substrates used for epitaxy deposition.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00540826
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