Electronic Resource
College Park, Md.
:
American Institute of Physics (AIP)
The Journal of Chemical Physics
96 (1992), S. 4852-4859
ISSN:
1089-7690
Source:
AIP Digital Archive
Topics:
Physics
,
Chemistry and Pharmacology
Notes:
Electron-spin-resonance spectroscopy has been used to study the structure of radiation-induced defects in a barium galliosilicate glass compositional series of BaO/Ga2O3=1.0 and 20–80 mol % SiO2. Spin-Hamiltonian parameters derived from computer line-shape simulations have been used to identify three oxygen-associated hole centers: a gallium-oxygen hole center and two variations of silicon-oxygen hole centers. Each of these defects contains an unpaired electron in a nonbonding oxygen p orbital. The compositional dependence of the ESR data is consistent with a gradual change from a Ga-based tetrahedral network to a Si-based tetrahedral network as the silica content is increased.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.462775
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