ISSN:
0020-7608
Keywords:
Computational Chemistry and Molecular Modeling
;
Atomic, Molecular and Optical Physics
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
Notes:
We consider the dielectric response to a donor ion in GaAs quantum wells of finite depths in two cases: (1) The ion is placed at the center of the well, (2) the ion is placed in off-center positions in the well. In each of these cases we calculate the binding energy of the donor atom for several well depths as a function of the width of the well and compare our values with those that arise when the donor atom is considered a hydrogenic impurity. We find that consideration of the dielectric response of the GaAs quantum well leads to deviations with respect to the hydrogenic theory. Specifically, we find that, in case (1), at a given well depth, our binding energies at the same well widths are larger in magnitude than those calculated from the hydrogenic theory. We also find that the discrepancy between the two sets of binding energies is a function of the width of the well, becoming less pronounced as the width of the well is increased. We further find that, in case (2), at a given well depth, as the donor atom is moved from the center of the well toward the wall of the well, our binding energies rise toward those that are calculated from the hydrogenic theory. Finally, we find that, both in case (1) and in case (2), the effect of the dielectric response of the GaAs quantum well to the presence of the donor ion becomes less pronounced as the depth of the well is decreased.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/qua.560300730
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