ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A set of heavily doped Al0.48In0.52As samples grown by molecular beam epitaxy on InP (Fe) substrates was investigated using the photoreflectance (PR) technique. The spectra at 300 K are characterized by a transition in the vicinity of the InP energy gap, followed by strongly damped Franz–Keldysh oscillations (FKOs) which do not appear when the spectra are obtained at 77 K. The builtin electric field estimated from FKOs shows a small doping dependence but is substantially affected by the inclusion of a thin layer of AlxGayIn1−x−yAs (x≡0.22) at the interface between InP (Fe) and AlInAs:Si. In order to explain these results, a model based on the discontinuity of the energy bands in the InP/AlInAs and InP/AlGaInAs/AlInAs systems and also on the matching of the Fermi levels between the different materials is suggested. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370329
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