ISSN:
0392-6737
Keywords:
Surface and interface electron states
;
Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary Photoluminescence (PL) and electroluminescence (EL) measurement of GaAs/AlGaAs quantum wires (QWR) located in the active region of a p-i-n junction are reported. The samples are fabricated by molecular-beam epitaxial growth on V-grooved substrates. Good control of the interface, defect density and doping profile have been achieved. Homogeneous current injection into the quantum wires is achieved with efficiencies comparable to current injection into a quantum well control sample. PL with and without an applied voltage across the junction was measured at 86 K and 300 K for different excitation densities. Peaks appearing with an applied voltage correspond to the active-region QWR transitions and are also observed on the EL spectra measured at 120 K and at 300 K. Clear evidence of 1D confinement is observed in both PL and EL spectra. They show a one-dimensional splitting of about 24 meV and a saturation of the ground state at high excitation density. The polarisation of the PL and EL is in good agreement with the expected anisotropy of the 1D matrix elements.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02457264
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