ISSN:
1432-0630
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
2 surface in the presence of an Mo tip and an applied tip–sample bias. The tip–sample bias is included by applying a constant electric field to the system in a direction perpendicular to the sample surface. The potential barriers for extraction of single Mo and S atoms from the surface are calculated with and without an external field, and the importance of the electric field for the probability of extracting a single Mo or S atom is examined. It is found that the local temperatures required to extract Mo and S atoms in the presence of a field and scanning tunnelling microscope tip are around 5000 K and 1600 K respectively. Interestingly, charge transfer between the tip and sample under bias effectively screens the electric field in the vacuum gap between the tip and sample.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051233
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