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  • 1
    Electronic Resource
    Electronic Resource
    Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 472-477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the initial stage of native oxide growth on an atomically flat hydrogen terminated silicon (Si) (111) surface by immersion in pure water using Fourier transformed infrared attenuated total reflection spectroscopy and reflection absorption spectroscopy. There is a sharp absorption peak at 2083 cm−1 arising from silicon monohydrides at surface terraces, this peak decreases and broadens with immersion time and seems to separate into two components. This broadening is considered to reflect the progress of very early native oxide growth. The experiment on a vicinal Si(111) surface showed that the absorption peaks arising from monohydrides at the terraces and at the steps on the surface decrease at approximately the same rate with immersion time. This indicates that the native oxide growth arises in spite of terraces and steps on the silicon surface. Furthermore, the large amount of silicon-hydrogen (Si–H) bonds not related with oxygen atoms suggests that the native oxide growth mechanism is not layer-by-layer oxidation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360853
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  • 2
    Electronic Resource
    Electronic Resource
    Thickness-deconvolved structural properties of thermally grown silicon dioxide films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3472-3474 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied structural and optical properties of thermally grown silicon dioxide films. These properties were examined by incrementally etching back the oxide films and performing infrared reflection absorption spectroscopy measurement at each thickness. We have divided the oxide into incremental layers and calculated the dielectric function of each of the layers. This study shows that the incremental layer, whose structure differs from that of bulk oxide, with thickness below 1 nm exists at the silicon and silicon dioxide interface. In addition, farther from the interface, the transverse optical mode frequency shifts slightly in wave number to a higher value. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371232
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  • 3
    Electronic Resource
    Electronic Resource
    Contribution of interface roughness to the infrared spectra of thermally grown silicon dioxide films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4076-4082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial oxide structures were studied by Infrared reflection absorption spectroscopic analysis. The longitudinal optical mode of the interfacial oxide films arose with lower frequencies and wider widths. We assumed and later verified that these changes resulted from the contribution of interfacial roughness. We therefore examined the contribution of interfacial roughness to the infrared spectra using the effective medium approximation model and via infrared spectra simulation. The experimental results explained by a model of that interface had an atomically roughness of within 1 nm and chemical structure changes effectively little fluctuation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370313
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    Paper (German National Licenses)
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