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Scanning tunneling microscopy in UHV with an X,Y,Z micropositioner (1994)

Göken, Mathias

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 65 (1994), S. 2252-2254

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: The extremely high resolution of a scanning tunneling microscope (STM) or atomic force microscope allows the examination of local material faults like dislocations, grain boundaries, and cracks on an atomic scale. However, the visual field of a scanning probe microscope is small and, especially in UHV, it is difficult to position a probe tip directly above such faults since they are not very frequent on a specimen surface. Therefore, a STM for the quantitative examination of large areas in UHV was developed. A new three-dimensional micropositioner based on inertial slip-stick motion was built, where the vertical motion is achieved with a special seesaw-like construction. This device is very compact and allows positioning of the piezoscanner with steps down to 20 nm length. The microspositioner is designed with low weight drives and special materials for the bearings (ruby on sapphire) to avoid sticking in UHV. First applications of a STM built with this micropositioner are shown where atomic resolution is reached.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1144736

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Elastic Moduli and Hardness of Cubic Silicon Nitride (2002)

Zerr, Andreas ; Kempf, Markus ; Schwarz, Marcus ; [et al.]

Westerville, Ohio : American Ceramics Society

Journal of the American Ceramic Society 85 (2002), S. 0

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ISSN: 1551-2916

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: The bulk modulus B0= 290(5) GPa and its first pressure derivative B′0= 4.9(6) were obtained for c-Si3N4 from volume versus pressure dependence. Measurements were performed under quasi-hydrostatic conditions in a diamond anvil cell to 53 GPa using synchrotron radiation and energy dispersive X-ray powder diffraction. This combined with nanoindentation measurements determined the shear modulus G0 of c-Si3N4 to be 148(16) GPa. The Vickers microhardness HV(0.5) for dense, oxygen-free c-Si3N4 was estimated to be between 30 and 43 GPa. Both the elastic moduli and microhardness of c-Si3N4 exceed those of the hexagonal counterparts, α- and β-phases.