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  • 1
    Electronic Resource
    Electronic Resource
    Structure Investigations of Heteroepitaxial CoSi〈sub〉2〈/sub〉/Si Layers Formed by Ion Implantation (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 143-147 (Oct. 1993), p. 1577-1582 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.143-147.1577.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 143-147 (Oct. 1993), p. 583-586 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.143-147.583.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Platinum-silicide formation during rapid thermal annealing: Dependence on substrate orientation and pre-implanted impurities (1991)
    Springer
    Applied physics 53 (1991), S. 168-171 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.A
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of Pt-silicide formation during rapid thermal annealing has been studied as a function of silicon-substrate orientation ((111), (011), and (001)) and type of pre-implanted impurity in the silicon substrate (As, Kr, and Ge). Rutherford backscattering spectrometry, transmission electron microscopy, and four-point probe resistivity measurements were used for this investigation. In the case of Pt2Si growth, both an orientation and impurity dependence was observed; the PtSi growth, however, was found to be independent of these parameters except in the case of As pre-implantation for which a retardation was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323878
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  • 4
    Electronic Resource
    Electronic Resource
    Secondary defect evolution in ion-implanted silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5081-5089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possible correlation between the annealing of secondary defects in silicon with high P background and anomalous diffusion of As or Sb was investigated. The P background (9×1019–4×1020 cm−3) was formed by phosphorus implantation (80 keV (2–10)×1015 cm−2), followed by rapid thermal annealing. Dislocation loops and misfit dislocations of various densities were formed under these conditions. Subsequently, As or Sb was implanted, and finally the crystals were annealed by rapid thermal annealing. By a combination of Rutherford backscattering/channeling, transmission electron microscopy and Hall measurements, anomalous diffusion of Sb and As and reduction or complete annealing of the secondary defects were found in the presence of the high P background. The results are discussed in terms of interaction between impurities and dislocations or defect complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347071
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of composition and annealing on structural defects in high-dose arsenic-implanted Si1−xGex alloys (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4185-4192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of structural defects in high-dose arsenic-implanted (peak concentration 9×1020–2.7×1021 cm−3), epitaxially grown, relaxed Si1−xGex (0.15≤x≤0.50) during rapid-thermal annealing (RTA) has been investigated as a function of composition x and RTA using transmission-electron microscopy. The formation of monoclinic GeAs precipitates is confirmed and examined at high RTA temperature. A new type of three-dimensional defect (which we call a "hair-like" defect) is found in the alloys of x=0.15–0.25. Such defects have not been observed in pure silicon and their presence in SiGe alloys is suggested to result from interactions between dislocations and GeAs precipitates. The effects of heating rate, annealing ambient, and implantation dose on both the formation of GeAs precipitates and the removal of dislocations are investigated. A possible influence of point defects on precipitate formation is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368634
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  • 6
    Electronic Resource
    Electronic Resource
    Si self-interstitial injection from Sb complex formation in Si (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3254-3259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation of deep B or Sb marker layers next to a 1.1×1020 cm−3 Sb box, as well as the formation of Sb precipitates within the box. It is concluded that the interstitials are not associated with precipitate growth, but that they are generated from formation of Sb-vacancy complexes, primarily involving 2 Sb atoms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289234
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  • 7
    Electronic Resource
    Electronic Resource
    Self-organization of GeAs nanodots in relaxed Si0.5Ge0.5 alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3494-3496 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the bimodal distribution and long-range ordering of GeAs nanodots obtained in strain-relaxed epitaxial Si0.5Ge0.5 alloy layers after arsenic implantation and rapid thermal annealing. GeAs dots of two different average sizes around 15 and 55 nm are found after high temperature rapid thermal annealing. The larger dots are of elliptical shape and located at the surface region; they are distributed preferably along 〈110〉 directions which correlates well with the observed cross-hatch pattern. The origin of the bimodal precipitate distribution as well as of the long-range ordering effect of the GeAs nanodots is discussed in terms of strain-induced nucleation and diffusion-limited growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418262
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  • 8
    Electronic Resource
    Electronic Resource
    Self-assembly of epitaxially grown Ge/Si quantum dots enhanced by As ion implantation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4025-4027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge/Si islands, grown using molecular-beam epitaxy on a Si/Si0.5Ge0.5 buffer structure modified with in situ ion implantation of 1 keV As+, are investigated by transmission electron microscopy (TEM), photoluminiscence (PL), and Raman spectroscopy. Vertically correlated Ge islands are observed by TEM as a result of the implantation. A 0.8 μm PL peak is detected from the layers of self-assembled Ge quantum dots. A nonhomogeneous distribution of strain around the Ge/Si islands is deduced from the Raman scattering data. This strain is assumed to be responsible for the PL emission. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425955
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  • 9
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of arsenic-implanted Si0.6Ge0.4 alloys: Temperature effects (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 655-657 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural transformations produced in strain-relaxed, low-dislocation-density Si0.6Ge0.4 films by As+ implantation and rapid thermal annealing were studied by transmission electron microscopy and x-ray microanalysis. The type of residual defects was found to be strongly dependent on annealing temperature. Only perfect dislocation loops were observed in implanted layers after annealing at 800 °C. Annealing at higher temperature (900 °C) results in complete removal of irradiation damage accompanied by the formation of GeAs precipitates of monoclinic phase and spherical shape. The results show that the behavior of As in Si–Ge alloys during thermal processing is remarkably different from that in Si. In particular, precipitation of As atoms in Si0.6Ge0.4 was found at an As concentration of 9×1020 cm−3 which is at least one order of magnitude lower than the critical As concentration for As precipitation in Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116499
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