Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 5981-5989
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A hot-filament chemical vapor deposition reactor in which the substrate is a heated wire was used to analyze the energy transport to the substrate during diamond deposition. In this reactor, radiation and convection contribute negligibly to substrate heating. Atomic hydrogen recombination to molecular hydrogen on the substrate surface accounts for ∼90% of the energy reaching the substrate. The atomic hydrogen recombination rate and the thermal accommodation coefficient for the energy released by atomic hydrogen recombination were estimated from in situ measurements for tungsten and diamond surfaces. The atomic hydrogen concentration gradient was estimated for simple geometries. The experimental conditions under which atomic hydrogen transport to the substrate is diffusion controlled were found. Addition of methane reduced the atomic hydrogen recombination rate on the substrate. An optimum pressure was found for the transport of atomic hydrogen to the substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355211
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