Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 3182-3184
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this work, the physical processes leading to contrast in scanning capacitance microscopy (SCM) are investigated both experimentally and theoretically. Using a p-type epitaxial doping staircase on silicon, we show that a monotonic dependence of the SCM signal on the doping level is only obtained, if the tip bias is adjusted in a way that the sample is either in accumulation or depletion. In the transition region, the SCM signal is nonmonotonic as a function of doping and depends on the bias. Therefore, any doping concentration can yield a maximum SCM signal size. We also show that this behavior is in agreement with the conventional model of a metal-oxide-semiconductor junction. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1415044
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