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  • 1
    Electronic Resource
    Electronic Resource
    Spatial sampling of crystal electrons by in-flight annihilation of fast positrons (1999)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 402 (1999), S. 157-160 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Energetic, positively charged particles travelling along a low-index crystal direction undergo many highly correlated, small-angle scattering events; the effect of these interactions is to guide or ‘channel’ (refs ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/45990
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3120-3122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A monolayer of Pb mediates high-quality homoepitaxial growth on Si (111) surfaces at temperatures where growth with other overlayer elements or on bare surfaces leads to amorphous or highly defective crystalline films. Nearly defect-free epitaxy proceeds for film thicknesses up to 1000 Å with no sign that this is an upper limit. The minimum temperature for high-quality epitaxy depends on the substrate miscut. For a 0.2° miscut, the minimum temperature is 340 °C. Films grown on substrates miscut 2.3° towards [112¯] show good crystalline quality down to 310 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122692
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  • 3
    Electronic Resource
    Electronic Resource
    A new atomic beam source: The "candlestick'' (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3746-3750 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a novel-type of atomic beam source which provides for long term, stable operation at high emission rates is reported. The heart of the design is the "candlestick'' where liquid source material is transported by capillary action to a localized hot emission region. A surrounding cavity kept at the melting point for the source material shields the vacuum chamber walls from this region. The atomic beam escaping from the source is collimated, and uncollimated atoms are transported back to the liquid reservoir at the bottom of the "candlestick'' by capillary action. This design has advantages over traditional oven designs: localized heating provides for large emission rates under high vacuum conditions, collimation is combined with recycling and conservation of source material, and the use of capillarity allows any orientation of the beam source. The source has been tested with sodium, and we believe that the design is useful for a broad range of applications including thin-film evaporation, molecular beam epitaxy, and semiconductor surface doping. With the low thermal mass of the emission section, the source could be optimized for pulsed mode operation. Furthermore, it is anticipated that the design ideas presented here could form the basis for a supersonic source with very high Mach numbers. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145246
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  • 4
    Electronic Resource
    Electronic Resource
    Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1505-1507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth allows the incorporation of As donors at concentrations reaching a few atomic percent. When Pb and Si are deposited on an As-terminated Si(111) substrate at 350 °C, the Pb segregates to the surface without doping the Si film while the As is buried within nanometers of the substrate–film interface. The resulting concentration of electrically active As, 1.8×1021 cm−3, represents the highest concentration of As donors achieved by any delta-doping or thin-film deposition method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352692
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  • 5
    Electronic Resource
    Electronic Resource
    Light emission from Er at the As-terminated Si(111) surface (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2165-2167 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium atoms at an arsenic-terminated Si(111) surface can be made to emit light at the 1.55 μm wavelength associated with an internal transition in the Er3+ ion. The As-terminated surface prepared under ultrahigh vacuum conditions has a surface recombination velocity of 50 cm s−1 and partially suppresses competing nonradiative recombination mechanisms. Following the deposition of Er, its characteristic light emission is observed only after oxygen reacts with the surface. The intensity of the light emitted by Er increases significantly upon cooling from 310 to 215 K. No light emission was observed from Er atoms deposited on 7×7 or H-terminated surfaces. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315335
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  • 6
    Electronic Resource
    Electronic Resource
    Comment on "Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb" [Appl. Phys. Lett. 75, 2954 (1999)] (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2616-2616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318930
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  • 7
    Electronic Resource
    Electronic Resource
    Synchrotron x-ray standing-wave study of arsenic on Si(100) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 252-254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The position of As atoms on the silicon(100) surface has been determined using the x-ray standing-wave technique and synchrotron radiation. Since the experiments were performed in air, the As-covered (100) surface was capped with amorphous silicon. The results of the measurements are in agreement with the symmetric As dimer model for the (100) surface. The distance of the As dimers normal to the ideal (100) surface was found to be 1.26±0.01 A(ring) which agrees with the value obtained from total energy minimization calculations. With no protective coating the As position was higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100139
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  • 8
    Electronic Resource
    Electronic Resource
    High quality crystalline YBa2Cu3O7−δ films on thin silicon substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1573-1575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−δ(001) (YBCO) films with near perfect crystallinity have been grown epitaxially on Si(100) using two intermediate buffer layers: Yttrium-stabilized zirconia (YSZ) and CeO2. All layers were grown by an in situ pulsed laser deposition process. The new films have Rutherford backscattering spectroscopy minimum yields as low as 5%, compared to 12% for YBCO films deposited directly on YSZ. The superconducting onset is above 90 K with a transition width ΔT of 1 K. After film deposition the Si substrate could be etched from the back to give a circular, 2-mm- diam, 4000 A(ring) uniformly thick Si membrane with 300 A(ring) YSZ, 80 A(ring) CeO2, and 1500–3000 A(ring) YBCO on top.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111843
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of substrate miscut on low-temperature homoepitaxial growth on Si(111) mediated by overlayers of Au: Evidence of step flow (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2553-2555 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observations of homoepitaxial growth on low-angle miscut (∼0.1°) Si(111) substrates through an overlayer of Au, together with earlier results on highly miscut Si(111) surfaces, indicate that growth in this system occurs by step flow. The growth temperatures were between 375 and 500 °C. In the optimum range of Au coverage (0.6–1.0 ML), ion channeling measurements yield at best χmin=5.0%, and cross-sectional transmission electron microscopy reveals stacking faults on (111) planes. Films produced under similar conditions on bare Si(111) substrates are much more defective. On the other hand, the defect density in the present films is higher than that in films grown on substrates with a higher miscut angle. The improvement in film quality resulting from the Au overlayers is attributed to an increase in the diffusion length of the Si adatoms, caused by Au passivation of the Si terraces. It is suggested that Au is more efficient than other overlayers in promoting step flow because Au passivates the Si(111) terraces without passivating the step edges. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118918
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  • 10
    Electronic Resource
    Electronic Resource
    Low-temperature homoepitaxial growth on Si(111) mediated by thin overlayers of Au (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 866-868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality homoepitaxial growth of Si on Si(111) through an overlayer of Au is shown to occur at 450–500 °C, far below the temperature required for growth of Si of similar quality on bare Si(111). Films of unlimited thickness can be obtained with excellent crystalline quality, as revealed by Rutherford backscattering spectrometry ion channeling measurements (χmin=2.2%). A distinct range of Au coverage (0.4–1.0 monolayer) results in the best quality epitaxy, with no measurable amount of Au trapped at either the interface or within the grown films. Cross-sectional transmission electron microscopy reveals that in films grown with Au coverages below and above the optimum range, the predominant defects are twins on (111) planes and Au inclusions, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112185
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