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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1505-1510 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a study of the generation of slow interface states (time constants (approximately-greater-than)40 s) by vacuum ultraviolet irradiation (Kr lamp, hν=10 eV) on metal–oxide–silicon samples with approximately 30 nm of thermally grown SiO2 and a transparent aluminum gate. The density of the centers in a given energy range was obtained from the shift of the midgap voltage over this range. A detailed energy level spectrum was determined from the stabilization times of the charging or discharging current observed after each of a series of 0.1 V steps in the bias voltage. Peaks in the energy level spectrum were observed for a position of the Fermi level at the Si–SiO2 interface near the band edges, at ≈0.25 eV above the valence-band edge and at ≈0.65 eV above the valence-band edge. The corresponding defects are identified as the oxygen vacancy, the Pb center (tentatively), and a hydrogen atom trapped at an oxygen atom in a strained Si–O–Si configuration near the Si/SiO2 interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 306-316 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article is concerned with the instability and recovery of the large negative midgap voltage induced in metal-thermally grown SiO2-silicon capacitors with transparent Al gate upon vacuum ultraviolet exposure by a Kr lamp (hν=10 eV). Evidence is presented from high-frequency capacitance–voltage measurements, showing that this midgap voltage instability is caused by the generation of unstable fast donor states, stable and unstable slow donor states, and drifting ions. Two fundamentally different mechanisms contribute to the gradual recovery of the samples: the disappearance of the unstable centers (fast and slow donor states and mobile ions) and hole emission from slow states and from mobile ions arriving at the substrate or at the gate. The annealing of unstable fast donor centers is inhibited when the states are charged positively. It is argued that the unstable fast and slow donor states and the drifting ions have an identical microscopic nature: all are associated with a H atom attached to an O atom in the network. The unstable fast donor states are attributed to H atoms trapped at or very close to the Si substrate, the unstable slow donor states to H trapped somewhat further away. Annealing of these unstable slow states is explained from the gradual disappearance of the atomic H from the oxide. It is shown that the stable slow states are related to near-interfacial O vacancies, activated by first trapping a hole. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4335-4344 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements on multichannel acceleration of intense, low-energy ion beams with a multiple electrostatic quadrupole array linear accelerator. The beam properties are investigated for different transverse and longitudinal focusing strengths, which can be adjusted independently in the accelerator. A maximum He+ ion current of four times 2 mA has been accelerated from 40 to 115 keV with an acceleration efficiency of 50%. Measurements and computer simulations suggest that the current is limited by transverse fields and by mismatch and misalignment of the beams, whereas longitudinal fields are of minor importance. The energy spread in the bunches is roughly three times the gap voltage.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5000-5011 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A fundamental study of the formation of negative hydrogen ions via surface conversion is presented. Employed is a novel type of converter, namely a porous tungsten button with liquid cesium flowing through it towards the side which is in contact with the plasma. A high cesium coverage, i.e., a small work function, can easily be maintained with this approach. This is related to the high flux of neutral cesium atoms to which the converter is exposed and to the small cesium density in the discharge. Despite the small work function, we obtain negative-ion yields which are an order of magnitude smaller than is usually found in more conventional experiments, in which the converter is cesiated via injection of cesium vapor into the discharge. Furthermore, our energy distributions show that no negative ions are formed via desorption by cesium-ion impact. This gives a strong indication that the extracted negative hydrogen ions are primarily formed via this process in cesium seeded discharges. Our view is confirmed by the observation that the negative-ion yield increases with an order of magnitude when a small amount of argon gas is injected into the discharge.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1899-1903 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 13.56-MHz rf discharge has been combined with two kinds of magnetic field. A multipole field, generated by permanent magnets in the surrounding walls, is used to confine the plasma. Superimposed on this is a variable magnetic field parallel to the substrate surface, which is shown to give a considerable increase in plasma density and reduction of electrode self-bias. Etch rates of SiO2 in a CF4 discharge of 5000 A(ring)/min at mTorr pressures are presented.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 241-248 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Negative ion formation on a W(110) surface which is covered with a coadsorbed layer of cesium and hydrogen is studied by scattering a proton beam from such a surface. The primary energy is 400 eV. The angle of incidence is 70° with respect to the surface normal. The hydrogen exposure ranges from 0 to 3000 L. The negative ion formation probability on a surface with 0.6 times the saturation cesium coverage is reduced by a factor of 4 by a hydrogen exposure of 3000 L. At small coverage the reduction is found to be proportional to the number of adsorbed hydrogen atoms. The formation probability on a surface which is covered with a thick cesium layer is hardly affected by a similar exposure. These phenomena are attributed to resonant electron transfer between a negative ion and an adsorbed hydrogen atom.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The negative hydrogen ion formation process on a cesiated W(110) surface is studied by scattering a proton beam from such a surface. The primary energy ranges from 50 to 3000 eV. The angle of incidence with respect to the surface normal is 45° or 70°. A maximum negative-ion formation probability of 0.67 is measured. This quantity does not depend on the angle of incidence. However, it is strongly influenced by the time the surface has been exposed to the beam. This effect is attributed to hydrogen implantation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2492-2502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Presented are measurements on the generation of negative hydrogen ion beams via the conversion of positive ion beams on low work function surfaces placed outside the positive ion source. The converter surfaces are positioned parallel to the beam axis and the positive ion beam is directed onto them by the increase of the beam divergence caused by beam retardation. Results include a negative hydrogen ion beam current of 15 mA at a current density of 6.2 mA/cm2. The converter work function is lowered by the deposition of a Cs monolayer. The Cs coverage could be maintained during the bombardment by the intense H+ beam through surface migration of the Cs from a reservoir.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2312-2316 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A beam of Cs+ ions with an energy of 500, 1000, or 2000 eV is scattered from a cesiated W(110) target. The angle of incidence is 45° or 75° with respect to the surface normal. The charge state and energy of the scattered particles are measured. The influence of hydrogen coadsorption on the final charge state is investigated. All scattered cesium particles are neutrals when the surface work function is smaller than 2.6 eV. The scattered particles have suffered a pronounced energy loss. From the measurements an extrapolation is made to conditions relevant for surface conversion negative ion sources.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2317-2325 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented for the mechanism which establishes the dynamic equilibrium cesium coverage on a W(110) converter surface in the discharge chamber of a negative hydrogen ion source. The charge state of cesium particles arriving at the converter surface is found to be a crucial parameter. A coverage greater than 0.26 monolayers cannot be maintained if the cesium component is highly ionized. The corresponding negative hydrogen ion formation probability is far from optimum. This situation is probably present in all high-density surface conversion negative ion sources employed nowadays.
    Type of Medium: Electronic Resource
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