ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The benefits of depositing AlN-SiC alloy transition layers on SiC substrates before theseeded growth of bulk AlN crystals were determined. The presence of the AlN-SiC alloy layerhelped to suppress the SiC decomposition by providing vapor sources of silicon and carbon. Itenabled a higher growth temperature, and hence a higher growth rate. In addition, cracks in thefinal AlN crystals can be decreased because of the intermediate lattice constants and thermalexpansion coefficient of AlN-SiC alloy. AlN-SiC alloys were first grown on off-axis SiC substratesby the sublimation-recondensation method. Then pure AlN crystals were grown upon those. Forcomparison, AlN crystals were directly grown on SiC substrates under similar conditions. X-raydiffraction (XRD) confirmed the formation of a pure single crystalline AlN layer upon the AlN-SiCalloy on SiC substrate. The presence of an AlN-SiC transition layer effectively inhibited theappearance of cracks in the resultant AlN crystals. X-ray topography (XRT) demonstrated that thethick AlN layer effectively released the strain present
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1497.pdf
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