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  • 1
    Electronic Resource
    Electronic Resource
    Infrared spectroscopic analysis of the Si/SiO2 interface structure of thermally oxidized silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1322-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface is probed by infrared and x-ray photoelectron spectroscopies. The layer-by-layer composition of the interface is evaluated by uniformly thinning thermal oxide films from 31 Å down to 6 Å. We find that the thickness dependence of the frequencies of the transverse optical and longitudinal optical phonons of the oxide film cannot be reconciled by consideration of simple homogeneous processes such as image charge effects or stress near the interface. Rather, by applying the Bruggeman effective medium approximation, we show that film inhomogeneity in the form of substoichiometric silicon oxide species accounts for the observed spectral changes as the interface is approached. The presence of such substoichiometric oxide species is supported by the thickness dependence of the integrated Si suboxide signal in companion x-ray photoelectron spectra. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372017
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal evolution of impurities in wet chemical silicon oxides (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1257-1259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used infrared absorption spectroscopy and x-ray photoelectron spectroscopy to study the thermal evolution (under ultrahigh vacuum conditions) of ultrathin silicon oxide films grown in acid solutions (HCl, HNO3, and H2SO4). We find that adsorbed hydrocarbon contaminants dissociate and become chemically incorporated into the thin oxide as additional silicon oxide, carbide, hydride, and hydroxyl species. These species significantly influence the thermal evolution of the oxide films and persist up to the SiO desorption temperature (850–1000 °C) so that, once formed, these defects will be necessarily present in the final device structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123517
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  • 3
    Electronic Resource
    Electronic Resource
    Si–H bending modes as a probe of local chemical structure: Thermal and chemical routes to decomposition of H2O on Si(100)-(2×1) (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 2440-2446 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Surface infrared spectroscopy and density functional cluster calculations are used to study the thermal and atomic hydrogen-induced decomposition of water molecules on the clean Si(100)-(2×1) surface. We report the first observation of the Si–H bending modes associated with the initial insertion of oxygen into the dimer and backbonds of a silicon dimer. We find that, while one and two oxygen-containing dimers are formed almost simultaneously during the thermal decomposition of water on this surface, atomic H can be used to drive the preferential formation of the singly oxidized dimer. This work highlights the sensitivity of Si–H bending modes to the details of local chemical structure in an inhomogeneous system, suggesting that the combined experimental and theoretical approach demonstrated herein may be extremely useful in studying even more complex systems such as the hydrogenation of defects in SiO2 films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.482061
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