ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
We review the impact of semiconductor surface preparation on the performance of metal-oxidesemiconductor field-effect transistor (MOSFET) gate stacks. We discuss high-permittivity dielectrics such as hafnium oxide and aluminum oxide on silicon and on the high carrier mobility substrate germanium. On Si, scaling of the gate stack is the prime concern. On Ge, fundamental issues of chemical and electrical passivation need to be resolved. Surface treatments consideredinclude oxidation, nitridation, hydrogenation, chlorination, and organic functionalization
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.103-104.3.pdf
Permalink