Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies (1993)
    Springer
    Electrical engineering 77 (1993), S. 15-19 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Die Leistungsfähigkeit dreier verschiedener Zweipolbauelemente, GaAs-IMPATT-Dioden, InP-Gunn-Bauelemente und GaAs-TUNNETT-Dioden, wird untersucht. Zwei unterschiedliche Herstellungsverfahren mit selektivem Ätzen wurden eingesetzt, um Bauelemente auf einer Diamant- bzw. integrierten Wärmesenke herzustellen. Hochfrequenzausgangsleistungen von 20 mW bei 120 GHz und 15 mW bei 135 GHz wurden mit GaAs-IMPATT-Dioden für das D-Band erzielt, 21 mW bei 120 GHz, 17 mW bei 133 GHz und 8 mW bei 155 GHz mit InP-Gunn-Bauelementen für das D-Band und bis zu 35 mW um 103 GHz mit GaAs-TUNNETT-Dioden für das W-Band. Typische Hochfrequenzwirkungsgrade lagen zwischen 0,9% und über 4%. Bei der ersten Oberwelle wurden mit TUNNETT-Dioden HF-Leistungen von 0,25 mW bei 223 GHz gemessen und 0,4 mW bei 220 GHz mit einem Gunn-Bauelement.
    Notes: Contents The power capabilities of three different two-terminal devices, GaAs IMPATT diodes, InP Gunn devices and GaAs TUNNETT diodes are evaluated. Two different selective etching technologies have been employed to fabricate devices on either a diamond heat sink or an integral heat sink. The reported RF power levels in fundamental mode are 20 mW at 120 GHz and 15 mW at 135 GHz for D-band GaAs IMPATT diodes, 21 mW at 120 GHz, 17 mW at 133 GHz and 8 mW at 155 GHz for D-band InP Gunn devices and up to 35 mW around 103 GHz for W-band GaAs TUNNETT diodes. Typical de to RF conversion efficiencies range from 0.9% up to over 4.0%. In second harmonic mode power levels of 0.25 mW at 223 GHz were measured from TUNNETT diodes and 0.4 mW at 220 GHz from a Gunn device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01574916
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3564-3569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical solution of the time-dependent Schrödinger equation for resonant-tunneling diodes has been impeded by the difficulty in handling open-system boundary conditions. This paper presents a boundary condition method to simulate the interaction with ideal particle reservoirs at the device boundaries. A switching transient is calculated where the device is switched from the peak current state to the valley current state. In addition, this method was used to develop a small-signal analysis of resonant-tunneling diodes. Results for the small-signal equivalent circuit of a particular device versus frequency are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341500
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2631-2633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of incorporating a spatially variable effective mass in the Schrödinger equation method of resonant tunneling device modeling is investigated. It is shown that inclusion of this effect can produce an order of magnitude difference in the calculated peak current density of the static current voltage (I-V) curve for the resonant tunneling diode. Results for a particular In0.53Ga0.47As-AlAs structure show that much better agreement between theory and experiment is obtained by including this effect. Also, comparison of transient results for an In0.53Ga0.47As-In0.52Al0.48As structure shows a significant change in the diode switching transients.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101958
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    C-V and I-V characteristics of quantum well varactors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2340-2346 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model for quantum well varactors is presented. The model is used to calculate the device C-V and I-V characteristics and very good agreement has been found between the calculated and measured results. Based on the model, a triple barrier double well varactor has been designed and fabricated. A very high capacitance ratio within a very small bias range is achieved, as designed. Details of the design calculations and experimental results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352322
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Observation of intrinsic bistability in resonant tunneling diode modeling (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 371-373 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic bistability has been observed experimentally and attributed to the effect on the potential profile from stored charge in the quantum well through Poisson's equation. This effect leads to two possible current states corresponding to a single voltage within the negative resistance region. In this letter a simulation method is presented which clearly shows bistability in the current-voltage curve of a resonant tunneling diode. This method self-consistently combines a Thomas–Fermi equilibrium model for the electron concentrations outside the double-barrier structure with a quantum calculation for the concentration inside the structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101874
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effects of biaxial strain on the intervalence-band absorption spectra of InGaAs/InP systems (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6549-6556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of biaxial strain on the intervalence-band absorption spectra of p-doped InGaAs/InP bulk layers are investigated. The study is performed by calculating and comparing the absorption coefficients corresponding to the direct transitions between the heavy and light hole bands, between the heavy hole and split-off bands, and between the split-off and light hole bands in both the lattice matched and the strained layers. The valence-band structures of these layers are neither isotropic nor parabolic and hence the k⋅p approach is utilized to calculate the band structures and their corresponding wave functions. The quantities are then invoked in the calculation of the (joint) density of states, the Fermi energy, and the momentum matrix element, which are needed in the evaluation of the intervalence-band absorption coefficients. These calculated results show that the intervalence-band absorption coefficients depend on the strain in the layer. The dependence is determined by the bands involved in the intervalence transition, the polarization of the incident light, and the type of the strain (compressive or tensile). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359064
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Built-in biaxial strain dependence of Γ-X transport in GaAs/InxAl1−xAs/GaAs pseudomorphic heterojunction barriers (x=0, 0.03, and 0.06) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7907-7914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of built-in biaxial strain on Γ-X transport in n-GaAs/i-InxAl1−xAs/n-GaAs pseudomorphic single-barrier structures (x=0, 0.03, and 0.06) are studied by measuring temperature-dependent I-V characteristics. For the accurate characterization of electron transport across each barrier, a self-consistent numerical model is used to analyze the experimental results. For each structure, the four barrier parameters defined from the thermionic-field-emission theory, the effective Richardson constant A*, the conduction-band offsets ΔEc1,2, and a tunneling mass mn* are extracted by calculating the theoretical I-V characteristics and fitting them to the experimental I-V-T data. The experimentally obtained X-point conduction-band shifts with the addition of indium are compared with the theoretical results calculated based on the model-solid theory. The results indicate that the addition of indium not only splits the degenerate X minima of the InxAl1−xAs barrier, but also shifts the relative barrier heights of both longitudinal and transverse X valleys due to the alloy-dependent band-structure modification. The comparison between the experimental and theoretical results illustrates that the transverse X valleys are the main conduction channel for the Γ-X transport across InxAl1−xAs pseudomorphic barriers. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357901
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    A self-consistent model of Γ-X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5053-5060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a numerical study of the Γ-X mixing in GaAs/AlAs/GaAs quantum well structures. A Γ-X mixing model proposed by Liu [Appl. Phys. Lett. 51, 1019 (1987)] is extended to include the effects of self-consistency and nonzero transverse momentum. In the present model, the coupled Schrödinger equations for Γ and X electron envelope wave functions are solved self-consistently with Poisson's equation to calculate the electron transmission probability and wave functions, which lead to the current-voltage (I-V) characteristics of single barrier and double barrier resonant tunneling diode structures. The quantum transmitting boundary method is employed in the model for numerical solution of the coupled Schrödinger equations, which proves to be very stable and efficient, even for large ((approximately-greater-than)2000 A(ring)) structures. The features of Γ-X mixing, such as the resonance/antiresonance in the transmission probability and the virtual bound states, are clearly demonstrated. Additional physical features are observed in the transmission probability and the wave functions under applied bias conditions. Our work shows that inclusion of transverse momentum, variable effective mass, and the self-consistent potential is important in the realistic modeling of I-V characteristics for structures exhibiting Γ-X coupling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354288
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Switching speeds in double-barrier resonant-tunneling diode structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7638-7639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Switching speeds are calculated for GaAs-AlGaAs resonant-tunneling diode structures with different barrier widths from the time-dependent Schrödinger equation. The speed is determined by monitoring the device current as the bias voltage is instantaneously switched. Effective mass discontinuities at the barrier and quantum well edges are included. Comparisons with previously published results using the wave packet approach are given. It is found that the turn-off transient is dominated by the lifetime of the quasibound state; however, care must be used in calculating the lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349726
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Improved boundary conditions for the time-dependent Schrödinger equation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 591-593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An improved boundary condition treatment for the time-dependent Schrödinger equation applied to resonant-tunneling diode simulation has been developed. This treatment is half-implicit, or centered in time, and allows larger time steps than the previous explicit treatment. The method does not complicate the time-dependent calculation since the resulting matrix is still tridiagonal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345203
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...