ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
We present the first comprehensive study of the large-signal switching characteristics of an AlGaAs/InGaAs modulation-doped field-effect transistor on a picosecond time scale. Electro-optic sampling is used to measure drain voltage response to a steplike gate input with a 2.8 ps rise time, at various dc biases. A large-signal switching time of 6.2 ps is obtained. Features deleterious to high-frequency device operation are observed, related to equivalent circuit parameters, and reduced by appropriate choice of operating point.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.107642
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