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1

Digitale Medien

Stress-induced metallic behavior under magnetic field in Pr1−xCaxMnO3 (x=0.5 and 0.4) thin films (invited) (2001)

Prellier, W. ; Simon, Ch. ; Mercey, B. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 6612-6617

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have investigated the role of the stress induced by the presence of the substrate in thin films of colossal magnetoresistive manganites on structural, resistive, and magnetic properties. Because of the strong coupling between the small structural distortions related to the charge ordering (CO) and the resistive properties, the presence of the substrate prevents the full development of the charge ordering in Pr0.5Ca0.5MnO3, especially in the very thin films. For thicker films, the CO state exists, but is not fully developed. Correlatively, the magnetic field which is necessary to suppress the CO is decreased drastically from 25 T to about 5 T on SrTiO3 substrates. We have also investigated the influence of the doping level by studying the case of Pr0.6Ca0.4MnO3. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1357134

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2

Digitale Medien

Large domain wall magnetoresistance up to room temperature in La0.7Sr0.3MnO3 bridges with nanoconstrictions (2001)

Wolfman, J. ; Haghiri-Gosnet, A. M. ; Raveau, B.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 89 (2001), S. 6955-6957

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: To obtain low field magnetoresistance (MR) in manganites, we have introduced a geometrically constrained magnetic domain wall (DW) in La0.7Sr0.3MnO3 micrometric devices. Nanoconstrictions artificially induced using high resolution e-beam lithography are shown to effectively reduce the DW width leading to strongly enhanced DW resistance. Sharp and large resistance switches result from the appearance and annihilation of the DWs. Room temperature sharp resistance switches, with a MR of 16%, are evidenced in a manganite-based device. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1362646

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3

Digitale Medien

Charge ordering in Pr0.5Ca0.5MnO3 thin films: A new form initiated by strain effects of LaAlO3 substrate (2000)

Haghiri-Gosnet, A. M. ; Hervieu, M. ; Simon, Ch. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 3545-3551

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The growth of [101] epitaxial films of Pr0.5Ca0.5MnO3 on LaAlO3 substrates has been achieved. The structure, nanostructure, and magnetotransport properties are reported and compared to those of the bulk material. The electron diffraction study evidences, at RT, a monoclinic cell with a(approximate)c(approximate)5.4 Å, b(approximate)7.6 Å, and β(approximate)91°. The monoclinic distortion is assumed to be due to strain effects. At 92 K, a system of extra reflections is observed which implies an incommensurate modulated structure. The component q of the modulation vector along a* ranges between 0.35 and 0.40. The lattice images show that the modulation is established throughout the whole film. The q value observed in the film is significantly lower than the one of the bulk material. This effect is correlated to strain effects of the substrate, limiting the cell distortion induced by charge ordering. An unusual insulating-ferromagnetic phase is observed with a critical temperature of 240 K, close to the TCO. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1286468

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4

Digitale Medien

Microstructure and magnetic properties of strained La0.7Sr0.3MnO3 thin films (2000)

Haghiri-Gosnet, A. M. ; Wolfman, J. ; Mercey, B. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 88 (2000), S. 4257-4264

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The lattice deformation of dense strained La0.7Sr0.3MnO3 (LSMO) films is shown to control the easy direction of the magnetization. Optimized pulsed laser deposited conditions allow the fabrication of dense LSMO thin films which present an exceptional flatness with a peak–valley roughness (Rp–v) of 1 Å, associated to epitaxial grains as large as 1 μm. Electron microscopy coupled with x-ray diffraction have been used to study the unit cell distortion of both tensile and compressive dense LSMO films as a function of the thickness. No relaxation of the lattice distortion imposed by substrate has been observed in the thickness range 10–60 nm. The Curie temperature is not significantly affected by the nature of the substrate: a TC of 350 K is observed for both SrTiO3 (STO) and LaAlO3 (LAO) substrates, i.e., close to the bulk material (369 K). In contrast, the easy direction of magnetization depends on the substrate. For tensile films deposited on the STO substrate, the unit cell is elongated along the film's plane (ain-plane=3.905 Å) with a reduced perpendicular parameter (cperp=3.85 Å): an easy direction of magnetization M in the plane of the film is observed. For compressive films deposited on LAO substrate, the situation is reversed with a unit cell elongated along the direction of growth (cperp=4.00 Å and ain-plane=3.79 Å) and an easy axis for M along this perpendicular out-plane direction. It is thus demonstrated that the larger cell parameter, ain-plane for films deposited on STO and cperp for films deposited on LAO, is fully correlated to the direction of the easy magnetization. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1309040

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5

Digitale Medien

Spectacular decrease of the melting magnetic field in the charge-ordered state of Pr0.5Ca0.5MnO3 films under tensile strain (2000)

Prellier, W. ; Haghiri-Gosnet, A. M. ; Mercey, B. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 1023-1025

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: An insulator-to-metal transition below 240 K is induced by applying a 7 T magnetic field in Pr0.5Ca0.5MnO3 thin films grown by the pulsed laser deposition technique on [100]-SrTiO3 substrates. This value of the melting magnetic field, much lower that the one required in bulk (∼20 T), is assumed to be an effect of the tensile stress. These results confirm the importance of the bandwidth in the control of the physical properties of this compound and open the route to get colossal magnetoresistive properties by using strain effects. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1288673

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