Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 540-542
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Diamond was deposited by the microwave plasma chemical vapor deposition method on a Si(100) substrate on which graphite flakes had been spread with their basal planes parallel to the substrate before deposition. Before diamond deposition, the substrate was preheated at 1200 °C under hydrogen at 60 Torr to clean the surface of graphite flakes. Scanning electron micrographs showed that most of diamond particles were cubo-octahedral in morphology. The {111} planes of some diamond particles, which were judged by their triangular shape, were often parallel to the (0001) plane of graphite. Furthermore, some 〈111〉-oriented diamond particles were clearly nucleated at the edge of graphite. The possibility of heteroepitaxy of diamond on graphite was discussed based on crystallographic considerations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112291
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