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  • 1
    Electronic Resource
    Electronic Resource
    Visible photoluminescence from helium-ion implanted carbon in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6185-6188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon wafers implanted with 30 keV He ions at room temperature in a low pressure hydrocarbon atmosphere exhibited visible photoluminescence. The samples were characterized by Raman, infrared, transmission electron microscopy, and heavy ion elastic recoil detection analysis. Two different layers were distinguishable on top of the silicon, with the upper layer comprising mostly amorphous carbon, as confirmed on a similarly implanted Be sample. Green photoluminescence was found to arise from the thinner a-Si1−xCx:H interface layer. Such a buried intermixed layer could be incorporated into a stable visible light emitting device based on crystalline silicon. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360563
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Forward elastic recoil measurements using heavy ions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4524-4532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of the elastic recoil detection technique utilizing heavy ions for the analysis of semiconductor samples is demonstrated. With this technique the depth profiles of the primary constituents as well as profiles of all impurities can be measured in one spectrum. Depending on the target material, a depth resolution down to 20 nm can be achieved. All elements except hydrogen can be detected with almost the same sensitivity, namely ∼1×1015 at/cm2 with 136 MeV I in a 30° recoil geometry. For hydrogen, the sensitivity is about four times better.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357284
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  • 3
    Electronic Resource
    Electronic Resource
    Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2791-2793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive indices of In1−xGaxAsyP1−y grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spectroscopic ellipsometry. Indices in the transparent regime of these quaternaries, at 980 and 808 nm (relevant to the design of pump sources for erbium-doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126477
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Helium bubbles in silicon: Structure and optical properties (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1319-1321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon samples were implanted with 20 keV He at various temperatures. The damage and the size of the He bubbles created during the implantation were measured with Raman spectroscopy and transmission electron microscopy. Room temperature implantation with 2.5×1017 He atoms/ cm2 produced an amorphized layer with a high density of small voids (∼5 nm). After annealing at 923 K the amorphous layer was recrystallized, but still contained extended defects. The He bubbles coalesced forming large bubbles in the implanted region. Implantation at 723 K left the Si essentially crystalline, but with a large number of defects. The He bubbles created at this temperature were larger than after room temperature implantation. Light emitting properties of this porous material are briefly discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113228
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