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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 105 (1983), S. 5142-5143 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 101 (1979), S. 67-73 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2509-2510 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In many cases the fluorescence EXAFS signal is contaminated with fluorescence from nearby elements. If this fluorescence is of lower energy than the element of interest, x-ray filters are not effective. One method for dealing with this problem is the double fluorescence method described by Wong and Rao. This paper describes an improved version of this double fluorescence scheme that greatly improves its efficiency. Data are presented for a sample of 1/2% Hf in Ni3 Al, and 1.6% CuO in NiO. When standard fluorescence is used, both signals are almost completely obscured by the (approximately-equal-to)100× larger Ni K fluorescence signal. With the double fluorescence detector the Hf L3 and Cu K-edge signals are clearly observed, and good spectra can be obtained in about an hour.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 290-293 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure (EXAFS) measurements have been made while simultaneously exciting x-ray standing waves in a multilayer structure. This allows the EXAFS signal from selected regions within the multilayer unit cell to be enhanced. The technique is applied to a Ni-Ti multilayer in which it is verified that strong standing-wave fields can be excited in the presence of substantial interfacial roughness. The measurements reveal little Ni-Ti intermixing and a strong low-Z impurity signal in the Ti layers. The standing-wave analysis indicates that the low-Z impurity is distributed throughout the Ti layers.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4250-4255 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented from a glancing angle extended x-ray absorption fine structure study to investigate the structure of W/C multilayers and the effects of moderate annealing. There is evidence of considerable interlayer mixing prior to any heat treatment. It is found that after annealing to 350 °C for several hours, drastic changes can occur in the structural environment of the W atoms, with minimal changes in the reflectivity of the sample. There is extensive formation of W2C depending on the W thickness and the W/C ratio. Identification of this carbide as the product of annealing is unambiguous. Above a critical thickness, W begins to grow in its bcc form within the W layer, as it is prepared. This bcc layer is unaffected by the annealing process. The presence of carbon is shown to stabilize the amorphous state of W and inhibits any formation of W2C when the W thickness and W/C ratio are small.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 650-651 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An improved double fluorescence detector for x-ray absorption spectroscopy is described and compared to a standard filter-slit detector.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4669-4673 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity has been used to determine the absolute metal density for both metals in bilayers of Al on top of Co, Cr, Cu, Mn, Ni, and Pd. A large variation in density is found with an observed range of 0.87–1.0 of bulk values. The results can be correlated with changes in the defect character as determined by variable-energy positron measurements. The size of the open volume defects systematically increases as the metal density decreases. A distinct densification of the Co layer was observed after annealing, and was accompanied by a corresponding reduction in the average size of the defects. There seems to be at least a partial correlation of the density with the melting point of the metals, although other factors such as the crystal structure are likely important. These results also demonstrate the application of x-ray reflectivity and variable-energy positrons to studies of thin metal films, and a discussion of their potential utility is included.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3766-3772 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the interface structure and reactions of Ni–Cr alloy and Al thin film bilayers using glancing-angle x-ray reflectivity and extended x-ray-absorption fine structure techniques. The Al/Ni–Cr bilayers were prepared by evaporation in ultrahigh vacuum with a clean interface (Clean) or an interface exposed to 600 Langmuir oxygen (O-exposed). No interfacial reaction is observed at room temperature in either the Clean or the O-exposed samples. Upon annealing for 10 minutes, initial reaction occurs at about 250 °C in the Clean sample and 310 °C in the O-exposed sample. The oxygen impurity at the interface retards the initial reaction and also modifies the diffusion behavior. In both Clean and O-exposed systems, the reaction starts between Ni and Al forming NiAl3. The reaction results in a Cr-rich region near the interface which transforms to the bcc structure. Only at higher temperatures do Cr and Al react to form CrAl7. The role of various diffusion channels and oxygen impurity at the interface in relationship to the reaction pattern will be discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1793-1799 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation measurements were made using glancing-angle x-ray reflectivity to study Cu-Al thin-film interfaces. The reflectivity data contains information about film morphology, and its sensitivity to the concentration of an element can be improved by measuring above and below an absorption edge. An analysis routine for the reflectivity data was developed to extract a model of the concentration profile and roughness. The results are compared from Cu-Al interfaces prepared in an ultrahigh vacuum environment, with and without exposure to oxygen before Al deposition. The reactions caused by thermal annealing at temperatures ranging from 65 to 160 °C are also studied. Density profiles of the two samples after various anneals indicate that there are different levels of mixing at the interface, and the tendency to reach a similar level after high-temperature (140–160 °C) anneals. The low levels of reaction observed in this work are difficult to detect by other techniques, such as Rutherford backscattering spectroscopy. In view of the simplicity and the sensitivity of the glancing-angle x-ray reflectivity technique, it can be generalized to other thin-film systems.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray-absorption fine-structure spectroscopy (EXAFS) has been used to determine the position of Zr within the unit cell of Sm2Co17. Induction-melted Sm2Co17:Zr ternary alloys, aged at 1180 °C, then quenched, consisted of intimately mixed H2:17 and R2:17 having Zr in solid solution as well some regions of R2:17 that were poor in Zr. EXAFS spectroscopy of these specimens indicates that the most probable position for Zr is a site having 2 Sm near-neighbor atoms and 11 Co atoms distributed over three different interatomic distances. This is consistent with a direct substitution of Zr for Co in the Co site in the mixed planes (12j in P63/mmc or 18f in R3m).
    Type of Medium: Electronic Resource
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