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  • 1
    Electronic Resource
    Electronic Resource
    Distribution of Defects in Polycrytalline Chalcopyrite Thin Films (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 309-316 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.51-52.309.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Density of states in CuIn(SSe)2 thin films from modulated photocurrent measurements (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2904-2911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of modulated photocurrent measurements in the temperature range between 180 and 300 K on polycrystalline CuIn(S,Se)2 thin films are presented. Modeling of the obtained phase shifts implies a continuous energetic distribution of traps in the band gap. A superposition of an exponential energetic distribution of traps with a characteristic energy of 60 meV and a Gaussian peak with a depth of 250 meV can explain the obtained phase shift and amplitudes between 250 and 300 K. For lower temperatures a change of the transport path, reducing the effective depth of the peak in the density of states and reducing the "attempt to escape frequency'' is likely. At low temperatures the phase shift depends on the photon flux due to the separation of the demarcation levels whereas in the case of the higher temperatures no significant dependence on the light intensity could be detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357528
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4411-4420 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to deduce energy distributions of defects in the band gap of a semiconductor by measuring the complex admittance of a junction is proposed. It consists of calculating the derivative of the junction capacitance with respect to the angular frequency of the ac signal corrected by a factor taking into account the band bending and the drop of the ac signal over the space charge region of the junction. Numerical modeling demonstrates that defect distributions in energy can be reconstructed by this method with high accuracy. Defect distributions of polycrystalline Cu(In,Ga)Se2 thin films are determined by this method from temperature dependent admittance measurements on heterojunctions of Cu(In,Ga)Se2 with ZnO that are used as efficient thin film solar cells. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363401
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  • 4
    Electronic Resource
    Electronic Resource
    Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 497-505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Post-deposition air-annealing effects of Cu(In,Ga)Se2 based thin films and heterojunction solar cell devices are studied by photoelectron spectroscopy and admittance spectroscopy. Ultraviolet photoelectron spectroscopy reveals type inversion at the surface of the as-prepared films, which is eliminated after exposure of several minutes to air due to the passivation of surface Se deficiencies. X-ray photoelectron spectroscopy demonstrates that air annealing at 200 °C leads to a decreased Cu concentration at the film surface. Admittance spectroscopy of complete ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells shows that the Cu(In,Ga)Se2 surface type inversion is restored by the chemical bath used for CdS deposition. Air annealing of the finished devices at 200 °C reduces the type inversion again due to defect passivation. Our results also show that oxygenation leads to a charge redistribution and to a significant compensation of the effective acceptor density in the bulk of the absorber. This is consistent with the release of Cu from the absorber surface and its redistribution in the bulk.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370758
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  • 5
    Electronic Resource
    Electronic Resource
    Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 318-325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed study of admittance spectroscopy and deep level transient spectroscopy on CuInSe2/CdS/ZnO thin film solar cells. The admittance spectra reveal an emission from a distribution of hole traps centered at an activation energy of 280 meV and a shallower level with a sharp activation energy of ∼ 120 meV. After repetitive annealing of the device in air at 200 °C, the activation energy of the latter level increases continuously from 120 to 240 meV, while the 280 meV hole traps remain unaffected. Deep level transient spectroscopy with optical excitation reveals an emission of minority carriers with time constants comparable to those observed for the shallow level in admittance spectroscopy. The shift of the activation energy after annealing also occurs in deep level transient spectroscopy and ascertains that the emissions observed in both techniques have the same origin. The magnitude and continuous shift of the activation energy of the minority carrier emission indicates a distribution of levels in the vicinity of the CdS/CuInSe2 heterointerface. In the case of interface states, the activation energy deduced from admittance spectroscopy corresponds to the position of the electron quasi-Fermi level at the interface, pointing to an inversion of the carrier type at the absorber surface. Measurements with an applied dc bias indicate that the electron Fermi level is pinned at the interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366686
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  • 6
    Electronic Resource
    Electronic Resource
    Meyer–Neldel behavior of deep level parameters in heterojunctions to Cu(In,Ga)(S,Se)2 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2888-2890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy was measured on Cu(In,Ga)(S,Se)2 thin film and single crystal heterojunctions. The emission rates of defects for various near-stoichiometric compositions follow a Meyer–Neldel rule, showing increasing attempt-to-escape frequencies with increasing defect depth. Defects in highly (In,Ga)-rich material showed lower attempt-to-escape frequencies and follow a separate Meyer–Neldel relation. Repetitive air annealing of a CuInSe2 heterojunction revealed a shift of the depth and capture cross section of an observed defect. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117352
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  • 7
    Electronic Resource
    Electronic Resource
    Carbon doping of Ga"xIn"1"-"xAs by atmospheric pressure organometallic vapour phase epitaxy
    Amsterdam : Elsevier
    Journal of Crystal Growth 132 (1993), S. 61-70 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(93)90247-T
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