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  • 1
    Electronic Resource
    Electronic Resource
    Theoretical investigations on electron trap generation by fluorine atoms in SiO2 film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6345-6349 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical investigation on the influence of F atoms incorporated into a thermal SiO2 film is presented. Energetics on the reaction of F atoms with the SiO2 film and the generation of electron traps are discussed using ab initio molecular orbital calculations. The computational result shows that a F atom dissociates a Si—O bond and generates OSi≡ moiety which can trap an electron. This gives a qualitatively appropriate explanation for the experimental result that F incorporated atoms into the SiO2 film generate electron traps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359105
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  • 2
    Electronic Resource
    Electronic Resource
    Suppression of thermally induced reactions at SiO2/single-crystalline Al interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 559-561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally induced reactions at SiO2/Al interfaces are investigated by cross-sectional transmission electron microscopy. For the SiO2/Al interfaces fabricated by chemical vapor deposition of SiO2 on polycrystalline Al films, precipitates of reduced Si as the reaction products are observed in the Al films and along the SiO2/Al interfaces, after annealing at 500 °C for more than 2 h. On the other hand, the interfaces fabricated on the single-Al(111) films show no precipitation even after 4 h of annealing. The differences in the interfacial reactivities are discussed in relation to the existence of grain boundaries and Al film orientations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360866
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  • 3
    Electronic Resource
    Electronic Resource
    Direct observation of a thin reacted layer buried at Al/SiO2 interfaces (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3554-3556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An Al/SiO2 interfacial structure is investigated by cross-sectional transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS) before and after post-metallization annealing. An interfacial reacted layer with uniform thickness of 2.5 nm is observed by TEM for samples annealed at 450 °C for 1 h. Further reaction is suppressed at higher annealing temperatures up to the eutectic point (577 °C) of an Al-Si system. XPS analysis of the interfacial structure is performed by removing the unreacted metallic Al layer selectively from the surface. The XPS spectra of the reaction products show that the interface has a layered structure of Al/Al2O3/Si/SiO2. This is discussed in relation to thermodynamic stability. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359536
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  • 4
    Electronic Resource
    Electronic Resource
    Al/n-GaAs Schottky barrier height modified with rare-earth metal interlayer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6575-6577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier heights are measured by current-voltage and capacitance-voltage methods for Al/n-GaAs contacts with a rare-earth metal (Sm, Dy, Yb) interlayer, which forms a stable alloy with Al but does not form an electrically active site in GaAs. The Schottky barrier height for each contact is found to be lowered with diode factor n〈1.06, compared to ideal Al/n-GaAs and rare-earth metal/n-GaAs contacts. The mechanisms for the lowering are discussed from standpoints of alloy formation and diffusion across the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342032
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  • 5
    Electronic Resource
    Electronic Resource
    Coercivity mechanism of sintered NdFeB magnets having high coercivities (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4750-4752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combination of some additions and substitutions to sintered Nd-Fe-B magnets was investigated in order to obtain high coercivity and good thermal stability. Some additions (Al,Ga,Nb,W) and a substitution (Dy for Nd) give Nd-Fe-B-based sintered magnets high coercivities without a large remanence loss. Small differences in the amount of additions (Nd,Dy)-Fe-(Al,Ga)-(Nb,W)-B for sintered magnets show no significant difference in magnetic hysteresis loops at room temperature. Those magnet alloys also have similar good thermal stability. Effects of additions in the high-coercivity materials are studied by measuring coercivities and anisotropy fields as a function of temperature. The small amount of additions (Nb,W) affects the large influence to the coercivity mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344800
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  • 6
    Electronic Resource
    Electronic Resource
    High-concentration Ce doping at n- and p-type Al/GaAs Schottky barrier interfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2403-2405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/GaAs Schottky barriers are fabricated with 2.5–20-A(ring) thick doping layers of Ce of concentrations 1020 cm−3 and 1021 cm−3 situated below the GaAs surface. Schottky barrier heights (SBHs) are determined from current- and capacitance-voltage measurements. n-type SBHs decrease with increasing Ce doping layer thickness, while p-type SBHs increase, but to a lesser degree. A cross-sectional image taken by high-resolution transmission electron microscopy shows that Ce is located in the substitutional sites of the doping layers. The changes in the SBHs are attributed to strain induced by Ce atoms in the substitutional sites. The difference in the magnitudes of change observed for n- and p-type SBHs is discussed in relation to the inhomogeneity observed in the density of Ce atoms at the interface regions.〈pc;normal〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106029
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  • 7
    Electronic Resource
    Electronic Resource
    Single-crystal Al growth on Si(111) by low-temperature molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1751-1753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al films were formed by low temperature molecular beam epitaxy on Si(111) surfaces. The substrates were pretreated in a NH4F solution to obtain a nearly atomically flat surface by anisotropic etching. Planview transmission electron microscopy observation demonstrates that single-crystal Al films are successfully grown on the 7×7 surface structure. Such single-crystal growth is arrested on a disordered or hydrogen-terminated surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109595
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  • 8
    Electronic Resource
    Electronic Resource
    Schottky barrier inhomogeneity caused by grain boundaries in epitaxial Al film formed on Si(111) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1057-1059 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Al contacts on Si(111) are fabricated by electron beam evaporation at various substrate temperatures around 250 °C. They are observed by high-resolution transmission electron microscopy. Schottky barrier heights (SBHs) of the contacts are measured using current-voltage and capacitance-voltage methods. In the case of single-crystalline Al film, the SBH does not change and its spatial distribution remains homogeneous up to an annealing temperature of 550 °C. In contrast with this, for an epitaxial Al film containing grain boundaries, the spatial distribution of the SBH becomes inhomogeneous above 400 °C. This is attributed to Si diffusion along the grain boundaries in the Al film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107715
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  • 9
    Electronic Resource
    Electronic Resource
    Partial melting of dry peridotites at high pressures: Determination of compositions of melts segregated from peridotite using aggregates of diamond
    Amsterdam : Elsevier
    Earth and Planetary Science Letters 114 (1993), S. 477-489 
    Details
    ISSN: 0012-821X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0012-821X(93)90077-M
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  • 10
    Electronic Resource
    Electronic Resource
    Excess ^2^2^8Th in the airborne dust: an indicator of continental dust from the East Asian deserts
    Amsterdam : Elsevier
    Earth and Planetary Science Letters 70 (1984), S. 110-114 
    Details
    ISSN: 0012-821X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0012-821X(84)90213-9
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