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  • 1
    ISSN: 1432-041X
    Keywords: Key words Ecdysone receptor ; Juvenile hormone ; Ultraspiracle ; Manduca
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Insect molting and metamorphosis are orchestrated by ecdysteroids with juvenile hormone (JH) preventing the actions of ecdysteroids necessary for metamorphosis. During the molt and metamorphosis of the dorsal abdominal epidermis of the tobacco hornworm, Manduca sexta, the isoforms involved in the ecdysone receptor (EcR)/Ultraspiracle (USP) complex change with the most dramatic switch being the loss of USP-1 and the appearance of USP-2 during the larval and pupal molts. We show here that this switch in USP isoforms is mediated by high 20-hydroxyecdysone (20E) and that the presence of JH is necessary for the down-regulation of USP-1 mRNA. The decrease of USP-1 mRNA in day 2 fourth instar larval epidermis in vitro required exposure to a high concentration (10–5 M) of 20E equivalent to the peak ecdysteroid concentration in vivo, whereas the increase of USP-2 mRNA occurred at lower concentrations (effective concentrations, EC50=6.3×10–7 M). During the pupal molt of allatectomized larvae which lack JH, USP-2 mRNA increased normally with the increasing ecdysteroid titer, whereas USP-1 mRNA remained high until pupation. When day 2 fifth instar larval epidermis was exposed to 500 ng/ml 20E in the absence of JH to cause pupal commitment of the cells by 24 h, USP-1 RNA remained at its high preculture level for 12 h, then increased two- to threefold by 24 h. The increase was prevented by the presence of 1 µg/ml JH I which also prevents the pupal commitment of the cells. By contrast, USP-2 mRNA increased steadily with the same EC50 as in fourth stage epidermis, irrespective of the presence or absence of JH. Under the same conditions, mRNAs for both EcR-B1 and EcR-A isoforms were up-regulated by 20E, each in its own time-dependent manner, similar to that seen in vivo. These initial mRNA increases were unaffected by the presence of JH I, but those seen after 12 h exposure to 20E were prevented by JH, indicating a difference in response between larvally and pupally committed cells. The presence of JH which maintained larval commitment of the cells also prolonged the half-life of the EcR proteins in these cells. These results indicate that both EcR and USP RNAs are regulated by 20E and can be modulated by JH in a complex manner with only that of USP-2 apparently unaffected.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Carbohydrate Research 177 (1988), S. c9-c12 
    ISSN: 0008-6215
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Superlattices and Microstructures 14 (1993), S. 105 
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 0048-3575
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4220-4225 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micro p-n junctions are formed in GaAs nanowhiskers having diameters of about 100 nm by metalorganic vapor phase epitaxy. The result of photoluminescence measurement shows that nanowhiskers with p-n junctions have the same confinement effect as one-dimensional quantum wires, the average effective width of which is about 30 nm. Infrared light emitted from the whisker as a result of carrier injection is observed at 4.2 and 77 K. The most important feature of this emitted light is the dependence of its intensity on the polarization. The intensity of the emitted light whose polarization is perpendicular to the whisker axis is about 20% less than the intensity of light with parallel polarization when the influence of the electrode structure is eliminated. This value is in agreement with the theoretically predicted value of 25%, confirming that a nanowhisker is a kind of quantum wire.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 447-462 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15–40 nm and about 2 μm long are reviewed and discussed. Experimental results for growing whiskers using Au as a growth catalyst during metalorganic vapor phase epitaxy (MOVPE) and the shape and growth direction of whiskers provide new insight into growth control of GaAs and InAs whiskers. The crystal structure of whiskers, Au behavior during MOVPE, and their growth mechanism are reviewed and discussed on the basis of transmission electron microscopic analysis. The photoluminescence spectra of GaAs wires are compared with those of a GaAs epitaxial layer, and the effect of surface treatment on the luminescence peak energy shift is discussed. The time dependent photoluminescence of GaAs wires is also discussed. The application of GaAs whiskers to light emitting devices is reviewed because a semiconductor wire structure employing quantum size effects is a very important element of electronic and optical devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 431-433 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Needle-shaped quantum size microcrystals as thin as 10 nm have been selectively grown by employing reduced pressure organometallic vapor phase epitaxy using trimethylgallium and arsine as source materials. The microcrystals grown within a SiO2 window area have their growth axes along the [111] direction. Transmission electron diffraction analysis shows that the crystal structure of microcrystals is consistent with the zinc-blende structure of GaAs. The mechanism for growing the needle-shaped crystals is similar to a vapor-liquid-solid (VLS) equilibrium phase growth model. From photoluminescence measurements at 4.2 K, it is found that the microcrystals show a very distinct spectra for free exciton and neutral acceptor-bound exciton recombinations, meaning good crystal quality.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 159-161 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalogranic vapor-phase epitaxy (MOVPE) growth of site-controlled nanowhiskers having a single preferential growth direction is accomplished by using a SiO2 window mask. A small window size (200×200 nm in this experiment) is essential for growing a single whisker from a single Au- seed cluster formed inside each window of the mask. The presence of the SiO2 mask greatly influences the MOVPE growth process, especially the growth direction and resultant diameter of the whiskers. This influence may be due to surface migration of the source materials or source gas diffusion near the surface from the masked region to the window region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1157-1158 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dense array of nanocolumns composed of GaAs-InAs jointed whiskers and SiO2 covers has been fabricated on InAs substrates. The cylindrical GaAs whisker with a 20 nm diameter and 1.5 μm long is jointed on top of 0.3-μm-long InAs whisker by vapor-liquid-solid epitaxy. The nanocolumns array exhibited photoluminescence at 14 K.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 386-387 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs lateral nanowhiskers are grown on the side wall of a ridge formed on a GaAs substrate. The growth positions of the lateral nanowhiskers are controlled by a technique based on electron beam lithography. Also, lateral nanowhiskers bridging between two parallel wall surfaces are grown. These methods are potentially applicable to the fabrication of planar-type quantum functional devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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