Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Novocain — Arterenol (1951)
    Springer
    Journal of molecular medicine 29 (1951), S. 393-394 
    Details
    ISSN: 1432-1440
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01477347
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Buchbesprechungen (1938)
    Springer
    Journal of molecular medicine 17 (1938), S. 748-751 
    Details
    ISSN: 1432-1440
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01777578
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Optical intersubband transitions in strained quantum wells utilizing In1−x GaxAs/InP solid solutions (1999)
    Springer
    Semiconductors 33 (1999), S. 72-79 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Infrared absorption in strained p-type In1−x GaxAs/InP quantum wells is investigated for both possible types of strain (tensile and compressive). It is observed that the normalincidence absorption increases considerably under compressive strain (when the ground state is a heavy-hole state) and decreases under tensile strain (when the ground state is a light-hole state). The peak absorption in the compressed quantum well can attain very large values, on the order of 5000 cm−1 at a hole density ∼ 1012 cm−2; this attribute makes “compressed” p-type quantum wells attractive for IR detection applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187650
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Arterenol Content of the Mammalian and Human Adrenal Medulla (1950)
    [s.l.] : Nature Publishing Group
    Nature 165 (1950), S. 683-683 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Two sources of urinary arterenol were considered1 : (1) the sympathetic nerves, in view of the pharmacological similarity between arterenol and the 'sym-pathin E' of Cannon ; (2) the suprarenal medulla. The work of Euler8 has shown that the sympathetic activity of extracts from sympathetic nerves ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/165683a0
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electronic states tuning of InAs self-assembled quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3172-3174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121583
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Strain effects on the intervalence-subband normal-incidence absorption in a p-type InGaAs/InP quantum well (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1706-1708 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice mismatch (strain) effects on the normal-incidence infrared absorption in In1−xGaxAs/InP quantum wells is investigated systematically, both tensile (x(approximately-greater-than)0.47) and compressive (x〈0.47) cases being considered. The difference of the valence-band parameters in the well and barrier materials is taken into account in the dipole matrix element calculations. For a constant hole sheet density, the compressive stress is found to enhance the infrared absorption substantially in the frequency range around 100 meV, corresponding to the H1–H3 type transitions, and the tensile stress is shown to decrease the normal-incidence intervalence-subband absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112892
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Si δ-layers embedded in GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3709-3711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrathin, 1–6 monolayers (MLs) thick, Si δ layer, is embedded in bulk GaAs. The normally observed self-assembling with resulting phase separation can be avoided until δ-layer thickness of 4 MLs, which opens the possibility to study two-dimensional (2D) properties of this III–V/IV heterostructure. Optical, electrical, transport, and structural characterization of the Si δ layer has been carried out. In luminescence, two novel emission bands are observed, which are blueshifted as the width of the Si δ layer is reduced, indicating pronounced 2D properties. The derived results on transition energies and electronic structure are compared with theoretical predictions obtained by a self-consistent approach. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122871
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Optical intervalence-subband transitions in strained p-type In1−xGaxAs/InP quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5256-5262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice mismatch (strain) effects on the infrared absorption in p-type In1−xGaxAs/InP quantum wells are investigated systematically for both tensile (x(approximately-greater-than)0.47) and compressive (x〈0.47) strains. The mismatch of the valence-band parameters in the well and barrier materials is taken into account in the optical matrix element calculations. We find that normal incidence optical matrix elements substantially increase in the case of the compressive strain (the ground state is heavy hole) and decreases in the case of the tensile strain (the ground state is light hole). The peak of the normal incidence absorption in the compressively strained QW is shown to reach a considerable value of 5000–6000 cm−1 for a sheet hole concentration of 1012 cm−2. For the z-polarization of the light we found a substantial enhancement of the optical matrix elements in the case of tensile strain (i.e., for a light-hole ground state). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359277
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Modulation-doped graded structures: Growth and characterization (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2370-2375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Remotely doped graded parabolic potential well structures have been grown and studied. Electrons distribute themselves uniformly in a parabolic well, the density being proportional to the curvature or quasidoping in the well. Quasidoped semiconductors are synthesized by molecular beam epitaxy in the GaAs/AlXGa1−XAs system through the digital alloy technique. The analog grading produced by the digital alloy is verified by photoluminescence excitation spectroscopy. Low temperature mobility measurements show higher mobility in these quasidoped semiconductors than in similar real-doped semiconductors. Alloy-disorder scattering is suggested to be the mobility-limiting mechanism in this digital alloy system. Capacitance–voltage profiling analysis of quasidoped semiconductors has been developed, and is used to measure carrier profiles in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348720
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Time-resolved spectroscopy of Zn- and Cd-doped GaN (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4589-4592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence transients and time-resolved luminescence spectra are reported for the violet-blue emissions from epitaxial layers of Zn- and Cd-doped GaN. A typical decay time of 300 ns is reported for the blue GaN:Zn emission, peaking at about 2.89 eV. For GaN:Cd a somewhat longer decay time of τ≈1 μs dominates for the broad peak centered at ≈2.72 eV. In both cases it is concluded that the simple process involving a free-to-bound transition of an electron to a hole bound at the ZnGa, respectively, the CdGa acceptor is the dominating recombination mechanism corresponding to these characteristic decay rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338366
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...