ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We investigate critical thicknesses of InGaN epilayers grown on GaN substrates with thegrowth-plane not being the c-plane. In particular, we focus on non-polar orientations with growthplanes being the m- and a-planes. We have taken into account the proper hexagonal symmetry ofwurtzite GaN. We have found that there is only a small difference in the critical thickness for the cplaneand the a-plane material; however, in the case of the m-plane material, we predict a quitedifferent behaviour along the (in-plane) c-axis and the perpendicular (in-plane) a-direction
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.567-568.209.pdf
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