ZIB

1

Digitale Medien

A study of the effects of annealing, zinc diffusion and copper diffusion on the defect structure of silicon-doped gallium arsenide (1982)

Hutchinson, P. W. ; Ball, R. K.

Springer

Journal of materials science 17 (1982), S. 406-416

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ISSN: 1573-4803

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau

Notizen: Abstract Transmission electron microscopy has been employed to study as-received, annealed, zinc-diffused and copper-diffused silicon-doped GaAs. The results on the as-received material show that the defect structure is dependent on the silicon doping level, with small perfect and faulted loops being present at high doping levels. The results of the annealing study on heavily doped material show that the size and density of the loop structure is strongly dependent on the temperature and type of loop. This behaviour has been interpreted in terms of previous work on the variation of the point-defect populations and free-carrier concentration with annealing temperature. The effect of zinc diffusion on the defect structure of heavily Si-doped GaAs has been found to be very similar to that observed after equivalent diffusions into Te-doped GaAs and is explained with reference to these results. The differences between the two cases are thought to be mainly due to the amphoteric nature of silicon in GaAs. The diffusion of copper has been found to result in large increases in the perfect and faulted loop areas. This, it is suggested, is due to the mechanism of copper diffusion in GaAs and the effect on point-defect populations of in-diffusing a p-type dopant into n-type material.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00591476

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2

Digitale Medien

The defect structure of GaAs after selenium implantation through a Si3N4 layer (1982)

Hutchinson, P. W. ; Ball, R. K. ; Dobson, P. S. ; [weitere]

Springer

Journal of materials science 1 (1982), S. 457-460

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ISSN: 1573-4811

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00721928

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3

Digitale Medien

Defect structure and tetrahedral precipitates in sulphur-doped gallium phosphide (1980)

Ball, R. K. ; Hutchinson, P. W.

Springer

Journal of materials science 15 (1980), S. 2376-2384

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ISSN: 1573-4803

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau

Notizen: Abstract Transmission electron microscopy has been used to study the defect structure in liquid encapsulated Czochralski GaP doped with 2×1018 S atoms cm−3. Dislocation clusters, stacking faults and precipitates were observed and analysed in as-grown, annealed and zinc diffused materials. In as-grown and annealed GaP both the perfect and faulted dislocation loops were shown to be interstitial in nature while the precipitates were found to be incoherent and tetrahedral in shape. Prolonged zinc diffusion was shown to increase the dislocation density and cause the precipitates to become coherent.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00552331

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4

Digitale Medien

The nature of inclusions in heavily tellurium-doped gallium arsenide (1974)

Hutchinson, P. W. ; Bastow, B. D.

Springer

Journal of materials science 9 (1974), S. 1483-1492

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ISSN: 1573-4803

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau

Notizen: Abstract Large elongated inclusions in heavily Te-doped 〈001〉 Czochralski pulled, GaAs crystals have been studied by a combination of scanning and transmission electron microscopy, electron microprobe analysis and X-ray topography. They have been shown to lie along the 〈110〉 directions in the {001} growth plane and to consist of two parts, an outer single crystal region of varying composition based on Ga2Te3 and an inner polycrystalline core rich in Te and As. Their crystallography has been interpreted in terms of impurity segregation and facet formation during crystal growth while their composition is discussed with reference to the Ga-As-Te phase diagram.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00552934

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5

Digitale Medien

Interstitial condensation in n+ GaAs (1975)

Hutchinson, P. W. ; Dobson, P. S.

Springer

Journal of materials science 10 (1975), S. 1636-1641

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ISSN: 1573-4803

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau

Notizen: Abstract Transmission electron microscopy of annealed tellurium-doped gallium arsenide has shown that a high constitutional interstitial defect population is present in n+ as-grown material. The point defects precipitate into the form of perfect interstitial dislocation loops when annealed above 380°C. The equivalent point defect concentration within the loops remains constant during isochronal and isothermal anneals and is dependent on the tellurium level. Copper diffusion is also found to influence the point defect concentration and copper may be the element responsible for the formation of the precipitates often associated with the large dislocation loops.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01031865

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