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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen dissociation on hot tantalum and tungsten filaments under diamond deposition conditions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 893-898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric power consumed by hot tantalum and tungsten filaments used to dissociate hydrogen molecules into hydrogen radicals was measured at filament temperatures of 2000, 2300, and 2500 °C and hydrogen pressures from 0.5–100 Torr. The measured power consumption at pressures above 30 Torr was well represented by a model that assumed thermodynamic equilibrium between H2 and H near the filament. With decreasing pressure, however, the dissociation of H2 shifted from an equilibrium-controlled regime to a surface-reaction-rate controlled regime. The relationship between the power consumption and the pressure in the surface-reaction-rate controlled regime was correlated with the surface dissociation probability, which was determined to range from 0.18 to 0.94. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359015
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  • 2
    Electronic Resource
    Electronic Resource
    Correlation between nucleation site density and residual diamond dust density in diamond film deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1192-1194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond was deposited on substrates pre-etched with diamond powder using either a microwave plasma chemical vapor deposition method or a hot-filament-assisted chemical vapor deposition method. Density of residual diamond dust (i.e., number of diamond particles per unit area on the surface of a substrate) on the pre-etched substrates was determined using field emission scanning electron microscopy, and ranged from 3.3×107 to 6.6×1010 #/cm2. The diamond nucleation-site density (i.e., number of nucleation sites per unit area on the surface of a substrate) ranged from 1.5×106 sites/cm2, typical of the deposition on a substrate etched with diamond paste, to 1.1×1010 sites/cm2, sufficient to create nanostructured diamond films. We found that the nucleation site density was about 10% of the residual dust density. Our results also show that the residual diamond dust is the main source of nucleation sites for diamond growth on diamond-etched substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112105
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication of silicon thin films with defects below detection limit of electron spin resonance for solar cells by high-speed zone-melting crystallization of amorphous silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3809-3811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon (Si) thin films with very-low defect density for solar cells were fabricated by using high-speed (0.7–4.5 mm/s) zone-melting crystallization (ZMC) of amorphous-silicon (a-Si) thin films, resulting in films that had defects below the detection limit of electron spin resonance (ESR). In this letter, poly-crystalline silicon (poly-Si) films for zone-melting recrystallization (ZMR) and a-Si films for ZMC were each sandwiched between two SiO2 films. The Si films were 0.3–2.0 μm thick, the top SiO2 films were 0.35–1.5 μm thick, and the bottom SiO2 films were 0.18–1.2 μm thick. The a-Si ZMC films had higher crystal quality than did the poly-Si ZMR films. Over 90% of the grains in the a-Si ZMC films had preferred (100) orientation when the films were formed at scan speeds 0.7–4.5 mm/s. Transmission electron microscopy (TEM) revealed that neither distinct grain boundaries nor defects were visible in the a-Si ZMC films within the 9-μm-diam observation field. The a-Si ZMC films fabricated from the a-Si films with the thickness smaller than 1 μm had no voids. Such a low defect density indicates that silicon thin-film solar cells with high efficiency can be fabricated by using such very-low defect density silicon thin films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421231
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  • 4
    Electronic Resource
    Electronic Resource
    Hydroquinone oxidation catalyzed by pyridine-Cu(II) complexes attached to polyorganosiloxane. II.For Part I, see: Reference 40. Elucidation of factors related to catalytic activity (1994)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 32 (1994), S. 2457-2467 
    Details
    ISSN: 0887-624X
    Keywords: polyorganosiloxane ; pyridine-Cu(II) complex ; catalysis ; hydroquinone oxidation ; copolymerization ; hydrophobicity ; flexibility ; equilibrium dialysis ; ESR spectroscopy ; cyclic voltammetry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The oxidation of hydroquinone catalyzed by pyridine-Cu(II) complexes attached to polyorganosiloxane was investigated in the mixed solvent of methanol/water (vol. ratio 2/1). The catalytic oxidation followed Michaelis-Menten-like kinetics. The large k2 term related to a turnover number indicated that the present polymeric catalysts have a remarkable effect on the activation process. The methylene number between the side-chain acid amido and pyridyl groups of the polymeric ligand was shown to be closely related to the appearance of hydrophobic effects in both the substrate-binding and the activation processes as deduced from the Michaelis constant and the thermodynamic and activation parameters. The binding parameters for 4-methoxyphenol with pyridyl-functionalized polyorganosiloxanes supported that the flexible backbone is also effective in the oxidation of hydroquinone. The Cu(II) complexes with pyridyl-functionalized polyorganosiloxane would have the structures distorted from square planar formation, which would promote the reduction of Cu(II) to Cu(I), as concluded from ESR spectroscopy and electrochemical measurement. © 1994 John Wiley & Sons, Inc.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pola.1994.080321307
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