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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 199-201 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we present a novel structure for light amplitude modulation based on a lateral p-i-n diode combined with a Bragg reflector which transforms the phase shift induced by the plasma dispersion effect in the intrinsic region of the diode into a voltage controlled variation of the reflectivity of the Bragg mirror. Numerical simulations show a modulation depth of 50% achieved in about 12 ns with a power dissipation of 4.0 mW and an insertion loss of 1.0 dB. The device is demonstrated to be very attractive in terms of power dissipation as compared to a Mach–Zehnder interferometer occupying the same area on chip. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1691-1693 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present a novel all-optical pump-probe technique for the measurement of effective recombination lifetime in silicon epitaxial layers. The procedure is based on the measurement of the variation of the attenuation coefficient due to optically injected free carriers of a planar dielectric waveguide defined by the epitaxial layer cladded between the substrate and the air. Perturbation theory is used to take into account nonuniform refractive index distribution due to nonzero surface recombination. The measurement technique is validated by both numerical simulation and experimental results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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