ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Silicon carbide (SiC) is a promising semiconductor material for power devices. However, itis so hard and so chemically stable that there is no efficient method of machining it without causingdamage to the machined surface. Plasma chemical vaporization machining (PCVM) is plasma etchingin atmospheric-pressure plasma. PCVM has a high removal rate equivalent to those of conventionalmachining methods such as grinding and lapping, because the radical density in atmospheric-pressureplasma is much higher than that in normal low-pressure plasma. In this paper, the polishingcharacteristics of SiC by PCVM are described. As a result of machining, the surface roughnesses ofboth Si- and C-faces were improved under a relatively low-etch-rate (100-200 nm/min) condition.The C-face was also improved under a relatively high-etch-rate (approximately 10 μm/min) condition,and a very smooth surface (below 2 nm peak-to-valley in a 500-nm-square area) was achieved
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.757.pdf
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